MP88N25C Datasheet and Replacement
Type Designator: MP88N25C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 560 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 88 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 123.8 nS
Cossⓘ - Output Capacitance: 1946 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: TO247
MP88N25C substitution
MP88N25C Datasheet (PDF)
mp88n25c.pdf

N RN-CHANNEL MOSFET MP88N25C MAIN CHARACTERISTICS Package ID 88 A VDSS 250 V Rdson Vgs=10V 43m -MAX Qg-Typ 99.36 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge UPS power sup
Datasheet: MP2N60ER , MP4N150 , MP4N50FR , MP4N60ER , MP7AN65EC , MP7AN65EF , MP7AN65ER , MP7AN65EV , P60NF06 , MP9N150 , MS65R120C , MS65R120F , MS65R120GE , MS65R120S , MS65R135R , MS65R170B , MS65R170C .
History: BUK9Y19-55B | BLP04N10-P | SM140R50CT1TL | AP60SL650AFI | NVMFS5C410N | 2SJ128-Z | DHB16N06
Keywords - MP88N25C MOSFET datasheet
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History: BUK9Y19-55B | BLP04N10-P | SM140R50CT1TL | AP60SL650AFI | NVMFS5C410N | 2SJ128-Z | DHB16N06



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