MP88N25C MOSFET. Datasheet pdf. Equivalent
Type Designator: MP88N25C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 560 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 88 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 99.36 nC
trⓘ - Rise Time: 123.8 nS
Cossⓘ - Output Capacitance: 1946 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: TO247
MP88N25C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MP88N25C Datasheet (PDF)
..1. Size:953K jilin sino
mp88n25c.pdf
mp88n25c.pdf
N RN-CHANNEL MOSFET MP88N25C MAIN CHARACTERISTICS Package ID 88 A VDSS 250 V Rdson Vgs=10V 43m -MAX Qg-Typ 99.36 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge UPS power sup
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