MP9N150 Datasheet and Replacement
Type Designator: MP9N150
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 370 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 61 nS
Cossⓘ - Output Capacitance: 298 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO247
MP9N150 substitution
MP9N150 Datasheet (PDF)
mp9n150.pdf

N N- CHANNEL MOSFET RMP9N150 MAIN CHARACTERISTICS Package ID 9 A VDSS 1500 V Rdson-max 2.50 Qg-typ 87.9 nC APPLICATIONS High efficiency switch mode power supplies - Electronic lamp ballasts UPS based on half bridge UPS
Datasheet: MP4N150 , MP4N50FR , MP4N60ER , MP7AN65EC , MP7AN65EF , MP7AN65ER , MP7AN65EV , MP88N25C , 18N50 , MS65R120C , MS65R120F , MS65R120GE , MS65R120S , MS65R135R , MS65R170B , MS65R170C , MS65R170F .
History: 2SK3101
Keywords - MP9N150 MOSFET datasheet
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History: 2SK3101



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