MP9N150 Datasheet. Specs and Replacement
Type Designator: MP9N150
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 370 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 61 nS
Cossⓘ - Output Capacitance: 298 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO247
MP9N150 substitution
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MP9N150 datasheet
Detailed specifications: MP4N150, MP4N50FR, MP4N60ER, MP7AN65EC, MP7AN65EF, MP7AN65ER, MP7AN65EV, MP88N25C, BS170, MS65R120C, MS65R120F, MS65R120GE, MS65R120S, MS65R135R, MS65R170B, MS65R170C, MS65R170F
Keywords - MP9N150 MOSFET specs
MP9N150 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: HAT1095C
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