All MOSFET. MP9N150 Datasheet

 

MP9N150 Datasheet and Replacement


   Type Designator: MP9N150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 298 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO247
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MP9N150 Datasheet (PDF)

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MP9N150

N N- CHANNEL MOSFET RMP9N150 MAIN CHARACTERISTICS Package ID 9 A VDSS 1500 V Rdson-max 2.50 Qg-typ 87.9 nC APPLICATIONS High efficiency switch mode power supplies - Electronic lamp ballasts UPS based on half bridge UPS

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

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