All MOSFET. MP9N150 Datasheet

 

MP9N150 Datasheet and Replacement


   Type Designator: MP9N150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 298 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO247
 

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MP9N150 Datasheet (PDF)

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MP9N150

N N- CHANNEL MOSFET RMP9N150 MAIN CHARACTERISTICS Package ID 9 A VDSS 1500 V Rdson-max 2.50 Qg-typ 87.9 nC APPLICATIONS High efficiency switch mode power supplies - Electronic lamp ballasts UPS based on half bridge UPS

Datasheet: MP4N150 , MP4N50FR , MP4N60ER , MP7AN65EC , MP7AN65EF , MP7AN65ER , MP7AN65EV , MP88N25C , 18N50 , MS65R120C , MS65R120F , MS65R120GE , MS65R120S , MS65R135R , MS65R170B , MS65R170C , MS65R170F .

History: BUK9624-55A | 2SK1446 | PHD82NQ03LT | BSC084P03NS3G | SVF2N60CNF

Keywords - MP9N150 MOSFET datasheet

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