All MOSFET. MP9N150 Datasheet

 

MP9N150 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MP9N150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 87.9 nC
   trⓘ - Rise Time: 61 nS
   Cossⓘ - Output Capacitance: 298 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO247

 MP9N150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MP9N150 Datasheet (PDF)

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 mp9n150.pdf

MP9N150 MP9N150

N N- CHANNEL MOSFET RMP9N150 MAIN CHARACTERISTICS Package ID 9 A VDSS 1500 V Rdson-max 2.50 Qg-typ 87.9 nC APPLICATIONS High efficiency switch mode power supplies - Electronic lamp ballasts UPS based on half bridge UPS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HX2301A

 

 
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