MS65R360F Specs and Replacement
Type Designator: MS65R360F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220F
MS65R360F substitution
- MOSFET ⓘ Cross-Reference Search
MS65R360F datasheet
ms65r120f ms65r120ge ms65r120c ms65r120s.pdf
N R N-CHANNEL MOSFET MS65R120 Package MAIN CHARACTERISTICS ID 30A VDSS 650 V Rdson-max 0.120 @Vgs=10V Qg-typ 58.4 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply ... See More ⇒
Detailed specifications: MS65R170B, MS65R170C, MS65R170F, MS65R170GE, MS65R170S, MS65R190RF1, MS65R190RGE, MS65R360C, STF13NM60N, MS65R360R, MS65R400RF, MS65R400RR, MS65R600F, MS65R600R, MS65R620RF, MS65R620RR, MT03N03FAL
Keywords - MS65R360F MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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