A2N7002K
MOSFET. Datasheet pdf. Equivalent
Type Designator: A2N7002K
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.9
V
|Id|ⓘ - Maximum Drain Current: 0.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 1.7
nC
trⓘ - Rise Time: 50
nS
Cossⓘ -
Output Capacitance: 11
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.2
Ohm
Package:
SOT-23
A2N7002K
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
A2N7002K
Datasheet (PDF)
..1. Size:356K ncepower
a2n7002k.pdf
http://www.ncepower.comA2N7002KNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 60V,I = 0.3ADS DR
7.1. Size:546K ait semi
ama2n7002.pdf
AMA2N7002 AiT Semiconductor Inc. www.ait-ic.com MOSFET 30V, 154mA, SINGLE, N-CHANNEL, GATE ESD PROTECTION DESCRIPTION FEATURES The AMA2N7002 is available in SC-89 package. Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate ORDERING INFORMATION ESD Protected: 2000V S- Prefix for Automotive and Other Applications Requirin
9.1. Size:68K ape
apa2n70k.pdf
APA2N70KRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 10S Simple Drive Requirement ID 0.35ADGSOT-223DDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switching,low on-resistance and cost
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