A2N7002K Datasheet and Replacement
Type Designator: A2N7002K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 11 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.2 Ohm
Package: SOT-23
A2N7002K substitution
A2N7002K Datasheet (PDF)
a2n7002k.pdf

http://www.ncepower.comA2N7002KNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 60V,I = 0.3ADS DR
ama2n7002.pdf

AMA2N7002 AiT Semiconductor Inc. www.ait-ic.com MOSFET 30V, 154mA, SINGLE, N-CHANNEL, GATE ESD PROTECTION DESCRIPTION FEATURES The AMA2N7002 is available in SC-89 package. Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate ORDERING INFORMATION ESD Protected: 2000V S- Prefix for Automotive and Other Applications Requirin
apa2n70k.pdf

APA2N70KRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristic RDS(ON) 10S Simple Drive Requirement ID 0.35ADGSOT-223DDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGcombination of fast switching,low on-resistance and cost
Datasheet: MT06N020A , MT06N020AL , MT20N024A , MT28N20A , MT40N20A , MT6JN008A , MT6JN009A , 2SK2049 , MMD60R360PRH , BSS123K , NCE0102A , NCE0102B , NCE0102E , NCE0102M , NCE0102Z , NCE0103 , NCE0104AN .
History: PMV28ENEA | P1003EVG | UTM2513 | BSC035N10NS5 | P6503FMA | 2SK2152 | P7006BL
Keywords - A2N7002K MOSFET datasheet
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History: PMV28ENEA | P1003EVG | UTM2513 | BSC035N10NS5 | P6503FMA | 2SK2152 | P7006BL



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