All MOSFET. NCE1102N Datasheet

 

NCE1102N Datasheet and Replacement


   Type Designator: NCE1102N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.2 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: SOT23-6L
 

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NCE1102N Datasheet (PDF)

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NCE1102N

http://www.ncepower.com NCE1102NNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE1102N uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features VDS = 110V,ID = 2A Schematic diagram RDS(ON)

Datasheet: NCE0260T , NCE0270T , NCE0275 , NCE0275D , NCE02P20K , NCE035P40GU , NCE1012E , NCE1013E , IRLZ44N , NCE1205 , NCE1490 , NCE14P40K , NCE1504R , NCE1505S , NCE1507AK , NCE1512IA , NCE1520 .

History: SMG2336N | FHD100N03A

Keywords - NCE1102N MOSFET datasheet

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