NCE1102N MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE1102N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.2 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 22 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: SOT23-6L
NCE1102N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE1102N Datasheet (PDF)
nce1102n.pdf
http://www.ncepower.com NCE1102NNCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE1102N uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features VDS = 110V,ID = 2A Schematic diagram RDS(ON)
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