NCE1102N Specs and Replacement

Type Designator: NCE1102N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 110 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 22 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: SOT23-6L

NCE1102N substitution

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NCE1102N datasheet

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 nce1102n.pdf pdf_icon

NCE1102N

http //www.ncepower.com NCE1102N NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE1102N uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features VDS = 110V,ID = 2A Schematic diagram RDS(ON) ... See More ⇒

Detailed specifications: NCE0260T, NCE0270T, NCE0275, NCE0275D, NCE02P20K, NCE035P40GU, NCE1012E, NCE1013E, AON6380, NCE1205, NCE1490, NCE14P40K, NCE1504R, NCE1505S, NCE1507AK, NCE1512IA, NCE1520

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