All MOSFET. NCE3134 Datasheet

 

NCE3134 Datasheet and Replacement


   Type Designator: NCE3134
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id| ⓘ - Maximum Drain Current: 0.75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 57 nC
   tr ⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: SOT-23
 

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NCE3134 Datasheet (PDF)

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NCE3134

Pb Free Producthttp://www.ncepower.com NCE3134NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3134 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V,ID =0.75A Sche

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: STP80NF70

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