All MOSFET. NCE3N150F Datasheet

 

NCE3N150F Datasheet and Replacement


   Type Designator: NCE3N150F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 32 nC
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: TO-220F
 

 NCE3N150F substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE3N150F Datasheet (PDF)

 ..1. Size:608K  ncepower
 nce3n150f.pdf pdf_icon

NCE3N150F

NCE3N150FN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 6.1. Size:627K  ncepower
 nce3n150t.pdf pdf_icon

NCE3N150F

NCE3N150TN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 6.2. Size:619K  ncepower
 nce3n150d.pdf pdf_icon

NCE3N150F

NCE3N150DN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched applications

 6.3. Size:648K  ncepower
 nce3n150pf.pdf pdf_icon

NCE3N150F

NCE3N150PFN-Channel Enhancement Mode Power MOSFETGeneral DescriptionThe series of Power MOSFETs use advanced V 1650 VDS min@Tjmaxtechnology and design.This high voltage MOSFET fitsR 5.5 DS(ON)TYPSwitched applications.ID 3 AQg 32 nCFeaturesHigh speed switchingIntrinsic capacitances and Qg minimized100% Avalanche TestedApplication Switched application

SHOW MORE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - NCE3N150F MOSFET datasheet

 NCE3N150F cross reference
 NCE3N150F equivalent finder
 NCE3N150F lookup
 NCE3N150F substitution
 NCE3N150F replacement

 

 
Back to Top

 


 
.