NCE3N150F Datasheet. Specs and Replacement

Type Designator: NCE3N150F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm

Package: TO-220F

  📄📄 Copy 

NCE3N150F substitution

- MOSFET ⓘ Cross-Reference Search

 

NCE3N150F datasheet

 ..1. Size:608K  ncepower
 nce3n150f.pdf pdf_icon

NCE3N150F

NCE3N150F N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications... See More ⇒

 6.1. Size:627K  ncepower
 nce3n150t.pdf pdf_icon

NCE3N150F

NCE3N150T N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications... See More ⇒

 6.2. Size:619K  ncepower
 nce3n150d.pdf pdf_icon

NCE3N150F

NCE3N150D N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched applications... See More ⇒

 6.3. Size:648K  ncepower
 nce3n150pf.pdf pdf_icon

NCE3N150F

NCE3N150PF N-Channel Enhancement Mode Power MOSFET General Description The series of Power MOSFETs use advanced V 1650 V DS min@Tjmax technology and design.This high voltage MOSFET fits R 5.5 DS(ON)TYP Switched applications. ID 3 A Qg 32 nC Features High speed switching Intrinsic capacitances and Qg minimized 100% Avalanche Tested Application Switched application... See More ⇒

SHOW MORE

Detailed specifications: NCE3407A, NCE3407E, NCE3415E, NCE3415Y, NCE3417, NCE3420X, NCE3N150, NCE3N150D, HY1906P, NCE3N150PF, NCE3N150T, NCE3N170, NCE3N170D, NCE3N170F, NCE3N170PF, NCE3N170T, NCE4003

Keywords - NCE3N150F MOSFET specs

 NCE3N150F cross reference

 NCE3N150F equivalent finder

 NCE3N150F pdf lookup

 NCE3N150F substitution

 NCE3N150F replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.