All MOSFET. FQA30N40 Datasheet

 

FQA30N40 Datasheet and Replacement


   Type Designator: FQA30N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 90 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO3PN
 

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FQA30N40 Datasheet (PDF)

 ..1. Size:779K  fairchild semi
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FQA30N40

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 30A, 400V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been

Datasheet: FQA160N08 , FQA170N06 , FQA19N60 , SDF07N50T , FQA24N60 , SDF07N50 , FQA27N25 , FQA28N15 , 10N65 , SDF06N60 , FQA32N20C , SDF05N50 , FQA36P15 , FQA40N25 , FQA44N30 , FQA46N15 , FQA55N25 .

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