FQA30N40 Specs and Replacement
Type Designator: FQA30N40
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 290 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO3PN
FQA30N40 substitution
- MOSFET ⓘ Cross-Reference Search
FQA30N40 datasheet
fqa30n40.pdf
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 30A, 400V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 90 nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been ... See More ⇒
Detailed specifications: FQA160N08, FQA170N06, FQA19N60, SDF07N50T, FQA24N60, SDF07N50, FQA27N25, FQA28N15, 4N60, SDF06N60, FQA32N20C, SDF05N50, FQA36P15, FQA40N25, FQA44N30, FQA46N15, FQA55N25
Keywords - FQA30N40 MOSFET specs
FQA30N40 cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: CS3N150AHR
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