All MOSFET. FQA30N40 Datasheet

 

FQA30N40 Datasheet and Replacement


   Type Designator: FQA30N40
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO3PN
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FQA30N40 Datasheet (PDF)

 ..1. Size:779K  fairchild semi
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FQA30N40

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 30A, 400V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 90 nC)planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been

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History: CHM85A3PAGP | ALD1103DB | SML100L16 | SQ9407EY-T1 | TK7P65W | ZXM66P03N8

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