All MOSFET. FQA36P15 Datasheet

 

FQA36P15 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQA36P15

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 294 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 36 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 81 nC

Maximum Drain-Source On-State Resistance (Rds): 0.09 Ohm

Package: TO3PN

FQA36P15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA36P15 Datasheet (PDF)

1.1. fqa36p15 f109.pdf Size:856K _fairchild_semi

FQA36P15
FQA36P15

September 2010 ® QFET FQA36P15 / FQA36P15_F109 150V P-Channel MOSFET Features Description • -36A, -150V, RDS(on) = 0.09Ω @VGS = -10 V These P-Channel enhancement mode power field effect • Low gate charge ( typical 81 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 110pF) This advanced technology has been espe

1.2. fqa36p15 fqa36p15 f109.pdf Size:868K _fairchild_semi

FQA36P15
FQA36P15

September 2010 QFET FQA36P15 / FQA36P15_F109 150V P-Channel MOSFET Features Description -36A, -150V, RDS(on) = 0.09? @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 81 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 110pF) This advanced technology has been especially tailore

 

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