FQA36P15 Datasheet and Replacement
Type Designator: FQA36P15
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 294 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 81 nC
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO3PN
FQA36P15 substitution
FQA36P15 Datasheet (PDF)
fqa36p15 fqa36p15 f109.pdf

September 2010 QFETFQA36P15 / FQA36P15_F109150V P-Channel MOSFETFeatures Description -36A, -150V, RDS(on) = 0.09 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 81 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 110pF)This advanced technology has been espe
fqa36p15 f109.pdf

September 2010 QFETFQA36P15 / FQA36P15_F109150V P-Channel MOSFETFeatures Description -36A, -150V, RDS(on) = 0.09 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 81 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 110pF)This advanced technology has been espe
fqa36p15.pdf

isc P-Channel MOSFET Transistor FQA36P15FEATURESDrain Current : I = -36A@ T =25D CDrain Source Voltage: V = -150V(Min)DSSStatic Drain-Source On-Resistance: R = 90m(Max) @V = -10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
Datasheet: FQA24N60 , SDF07N50 , FQA27N25 , FQA28N15 , FQA30N40 , SDF06N60 , FQA32N20C , SDF05N50 , IRF830 , FQA40N25 , FQA44N30 , FQA46N15 , FQA55N25 , FQA62N25C , FQA65N20 , SDF05N40T , FQA6N90CF109 .
Keywords - FQA36P15 MOSFET datasheet
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