FQA36P15
MOSFET. Datasheet pdf. Equivalent
Type Designator: FQA36P15
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 294
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 36
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 81
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09
Ohm
Package:
TO3PN
FQA36P15
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQA36P15
Datasheet (PDF)
..1. Size:868K fairchild semi
fqa36p15 fqa36p15 f109.pdf
September 2010 QFETFQA36P15 / FQA36P15_F109150V P-Channel MOSFETFeatures Description -36A, -150V, RDS(on) = 0.09 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 81 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 110pF)This advanced technology has been espe
..2. Size:856K fairchild semi
fqa36p15 f109.pdf
September 2010 QFETFQA36P15 / FQA36P15_F109150V P-Channel MOSFETFeatures Description -36A, -150V, RDS(on) = 0.09 @VGS = -10 V These P-Channel enhancement mode power field effect Low gate charge ( typical 81 nC) transistors are produced using Fairchilds proprietary, planarstripe, DMOS technology. Low Crss ( typical 110pF)This advanced technology has been espe
..3. Size:305K inchange semiconductor
fqa36p15.pdf
isc P-Channel MOSFET Transistor FQA36P15FEATURESDrain Current : I = -36A@ T =25D CDrain Source Voltage: V = -150V(Min)DSSStatic Drain-Source On-Resistance: R = 90m(Max) @V = -10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole
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