FQA40N25 Specs and Replacement
Type Designator: FQA40N25
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO3PN
FQA40N25 substitution
- MOSFET ⓘ Cross-Reference Search
FQA40N25 datasheet
fqa40n25.pdf
May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 40A, 250V, RDS(on) = 0.07 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 70 pF) This advanced technology has been esp... See More ⇒
fqa40n25.pdf
isc N-Channel MOSFET Transistor FQA40N25 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 70m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
Detailed specifications: SDF07N50, FQA27N25, FQA28N15, FQA30N40, SDF06N60, FQA32N20C, SDF05N50, FQA36P15, 5N60, FQA44N30, FQA46N15, FQA55N25, FQA62N25C, FQA65N20, SDF05N40T, FQA6N90CF109, FQA70N10
Keywords - FQA40N25 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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