FQA40N25 Datasheet and Replacement
Type Designator: FQA40N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO3PN
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FQA40N25 Datasheet (PDF)
fqa40n25.pdf

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 40A, 250V, RDS(on) = 0.07 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC)planar stripe, DMOS technology. Low Crss ( typical 70 pF)This advanced technology has been esp
fqa40n25.pdf

isc N-Channel MOSFET Transistor FQA40N25FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: SDF07N50 , FQA27N25 , FQA28N15 , FQA30N40 , SDF06N60 , FQA32N20C , SDF05N50 , FQA36P15 , 2N60 , FQA44N30 , FQA46N15 , FQA55N25 , FQA62N25C , FQA65N20 , SDF05N40T , FQA6N90CF109 , FQA70N10 .
History: UPA2720AGR | UT8205A | WML11N80M3 | HFP840 | FQI12N60TU | PSMN023-80LS | PSMN8R5-100ES
Keywords - FQA40N25 MOSFET datasheet
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History: UPA2720AGR | UT8205A | WML11N80M3 | HFP840 | FQI12N60TU | PSMN023-80LS | PSMN8R5-100ES



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