NCEA15P30K Datasheet and Replacement
Type Designator: NCEA15P30K
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 117 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO252
NCEA15P30K substitution
NCEA15P30K Datasheet (PDF)
ncea15p30k.pdf

http://www.ncepower.com NCEA15P30KNCE Automotive P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA15P30K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications. It is ESD protested.General Features V =-150V,I =-30ADS DSchematic diagramR
Datasheet: NCE85H21TC , NCE85H25 , NCE85H25T , NCE8736 , NCE9435A , NCEA0130AG , NCEA01P13K , NCEA02P20K , TK10A60D , NCEA2301 , NCEA4080K , NCEA40P25G , NCEA6042AG , NCEA6050KA , NCEA6058K , NCEA6080K , NCEA60ND08S .
History: APT6029SFLLG | TSF10N65M | IRF6216PBF | HM50N03K | 2SK2527-01MR | IXTH1N200P3HV | CSFR4N60F
Keywords - NCEA15P30K MOSFET datasheet
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History: APT6029SFLLG | TSF10N65M | IRF6216PBF | HM50N03K | 2SK2527-01MR | IXTH1N200P3HV | CSFR4N60F



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