NCEA15P30K MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEA15P30K
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 124 nC
trⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 117 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: TO252
NCEA15P30K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEA15P30K Datasheet (PDF)
ncea15p30k.pdf
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http://www.ncepower.com NCEA15P30KNCE Automotive P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA15P30K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications. It is ESD protested.General Features V =-150V,I =-30ADS DSchematic diagramR
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