All MOSFET. NCEA40P25G Datasheet

 

NCEA40P25G Datasheet and Replacement


   Type Designator: NCEA40P25G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 41.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: DFN5X6-8L
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NCEA40P25G Datasheet (PDF)

 ..1. Size:356K  ncepower
 ncea40p25g.pdf pdf_icon

NCEA40P25G

http://www.ncepower.comNCEA40P25GNCE Automotive P-Channel Enhancement Mode Power MOSFETGeneral Features V =-40V,I =-35A (Silicon Limited)DS DDescriptionR =11.5m (typical) @ V =10VDS(ON) GSThe NCEA40P25G uses uses advanced trench technology toR =18.5m (typical) @ V =4.5VDS(ON) GSprovide excellent R , This device is suitable for use as a loadDS(ON) High densi

 8.1. Size:932K  ncepower
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NCEA40P25G

http://www.ncepower.com NCEA4080KNCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA4080K uses advanced trench technology anddesign to provide excellent R with low gate charge. It canDS(ON)be used in a wide variety of applications.General Features V =40V,I =80ADS DR

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: 2SK3399B | IRF620 | RUF020N02 | 2SK3943-ZP | HX3400A | IXTH05N250P3HV | 2SK1035

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