NCEA6080K Specs and Replacement
Type Designator: NCEA6080K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 290 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
Package: TO252
NCEA6080K substitution
- MOSFET ⓘ Cross-Reference Search
NCEA6080K datasheet
ncea6080k.pdf
http //www.ncepower.com NCEA6080K NCE N-Channel Enhancement Mode Power MOSFET Description The NCEA6080K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. Schematic diagram General Features V =60V,I =80A DS D R ... See More ⇒
ncea6058k.pdf
http //www.ncepower.com NCEA6058K NCE Automotive N-Channel Enhancement Mode Power MOSFET Description The NCEA6058K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =64A DS D R ... See More ⇒
ncea60nd08s.pdf
NCEA60ND08S http //www.ncepower.com NCE Automotive N-Channel Enhancement Mode Power MOSFET General Features V = 60V,I =8A DS D Description R ... See More ⇒
Detailed specifications: NCEA02P20K, NCEA15P30K, NCEA2301, NCEA4080K, NCEA40P25G, NCEA6042AG, NCEA6050KA, NCEA6058K, IRF530, NCEA60ND08S, NCEA60ND18G, NCEA60P82AK, NCEA65NF036T, NCEA65NF036T4, NCEA85H25, NCEAP0135AK, NCEAP016N10LL
Keywords - NCEA6080K MOSFET specs
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