NCEA60ND18G Datasheet and Replacement
Type Designator: NCEA60ND18G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: DFN5X6-8L
NCEA60ND18G substitution
NCEA60ND18G Datasheet (PDF)
ncea60nd18g.pdf

NCEA60ND18Ghttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =20ADS DDescriptionR
ncea60nd08s.pdf

NCEA60ND08Shttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 60V,I =8ADS DDescriptionR
ncea6058k.pdf

http://www.ncepower.comNCEA6058KNCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6058K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =64ADS DR
ncea6050ka.pdf

http://www.ncepower.comNCEA6050KANCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6050KA uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =50A Schematic diagramDS DR
Datasheet: NCEA2301 , NCEA4080K , NCEA40P25G , NCEA6042AG , NCEA6050KA , NCEA6058K , NCEA6080K , NCEA60ND08S , IRFP450 , NCEA60P82AK , NCEA65NF036T , NCEA65NF036T4 , NCEA85H25 , NCEAP0135AK , NCEAP016N10LL , NCEAP016N60VD , NCEAP016N85LL .
History: P0460BTF | SWN2N70D | BUZ54A | NCE8295AD | P9515BD | 2SJ244 | CJP75N80
Keywords - NCEA60ND18G MOSFET datasheet
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History: P0460BTF | SWN2N70D | BUZ54A | NCE8295AD | P9515BD | 2SJ244 | CJP75N80



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