All MOSFET. NCEA60ND18G Datasheet

 

NCEA60ND18G Datasheet and Replacement


   Type Designator: NCEA60ND18G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: DFN5X6-8L
 

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NCEA60ND18G Datasheet (PDF)

 ..1. Size:724K  ncepower
ncea60nd18g.pdf pdf_icon

NCEA60ND18G

NCEA60ND18Ghttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =20ADS DDescriptionR

 6.1. Size:811K  ncepower
ncea60nd08s.pdf pdf_icon

NCEA60ND18G

NCEA60ND08Shttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 60V,I =8ADS DDescriptionR

 8.1. Size:900K  ncepower
ncea6058k.pdf pdf_icon

NCEA60ND18G

http://www.ncepower.comNCEA6058KNCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6058K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =64ADS DR

 8.2. Size:1045K  ncepower
ncea6050ka.pdf pdf_icon

NCEA60ND18G

http://www.ncepower.comNCEA6050KANCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6050KA uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =50A Schematic diagramDS DR

Datasheet: NCEA2301 , NCEA4080K , NCEA40P25G , NCEA6042AG , NCEA6050KA , NCEA6058K , NCEA6080K , NCEA60ND08S , IRFP450 , NCEA60P82AK , NCEA65NF036T , NCEA65NF036T4 , NCEA85H25 , NCEAP0135AK , NCEAP016N10LL , NCEAP016N60VD , NCEAP016N85LL .

History: P0460BTF | SWN2N70D | BUZ54A | NCE8295AD | P9515BD | 2SJ244 | CJP75N80

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