Справочник MOSFET. NCEA60ND18G

 

NCEA60ND18G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCEA60ND18G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 31 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 25 nC
   trⓘ - Время нарастания: 7 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: DFN5X6-8L

 Аналог (замена) для NCEA60ND18G

 

 

NCEA60ND18G Datasheet (PDF)

 ..1. Size:724K  ncepower
 ncea60nd18g.pdf

NCEA60ND18G NCEA60ND18G

NCEA60ND18Ghttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =20ADS DDescriptionR

 6.1. Size:811K  ncepower
 ncea60nd08s.pdf

NCEA60ND18G NCEA60ND18G

NCEA60ND08Shttp://www.ncepower.comNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 60V,I =8ADS DDescriptionR

 8.1. Size:900K  ncepower
 ncea6058k.pdf

NCEA60ND18G NCEA60ND18G

http://www.ncepower.comNCEA6058KNCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6058K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =64ADS DR

 8.2. Size:1045K  ncepower
 ncea6050ka.pdf

NCEA60ND18G NCEA60ND18G

http://www.ncepower.comNCEA6050KANCE Automotive N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6050KA uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =60V,I =50A Schematic diagramDS DR

 8.3. Size:929K  ncepower
 ncea6080k.pdf

NCEA60ND18G NCEA60ND18G

http://www.ncepower.comNCEA6080KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA6080K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.Schematic diagramGeneral Features V =60V,I =80ADS DR

 8.4. Size:837K  ncepower
 ncea60p82ak.pdf

NCEA60ND18G NCEA60ND18G

NCEA60P82AKhttp://www.ncepower.comNCE Automotive P-Channel Enhancement Mode Power MOSFETDescriptionThe NCEA60P82AK uses advanced trench technology and designto provide excellent R with low gate charge .This device is wellDS(ON)suited for high current load applications.General FeaturesSchematic diagram V =-60V,I =-82ADS DR

 8.5. Size:623K  ncepower
 ncea6042ag.pdf

NCEA60ND18G NCEA60ND18G

http://www.ncepower.comNCEA6042AGNCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V =60V,I =42ADS DDescriptionR

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