NCEA85H25 Datasheet and Replacement
Type Designator: NCEA85H25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 425 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 250 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 863 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO220
NCEA85H25 substitution
NCEA85H25 Datasheet (PDF)
ncea85h25.pdf

http://www.ncepower.comNCEA85H25NCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 85V,I =250ADescription DS DThe NCEA85H25 uses advanced trench technology and R
Datasheet: NCEA6050KA , NCEA6058K , NCEA6080K , NCEA60ND08S , NCEA60ND18G , NCEA60P82AK , NCEA65NF036T , NCEA65NF036T4 , IRFZ24N , NCEAP0135AK , NCEAP016N10LL , NCEAP016N60VD , NCEAP016N85LL , NCEAP0178AK , NCEAP018N60AGU , NCEAP018N60GU , NCEAP018N85LL .
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