All MOSFET. NCEA85H25 Datasheet

 

NCEA85H25 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEA85H25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 425 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 250 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Total Gate Charge (Qg): 296 nC
   Rise Time (tr): 100 nS
   Drain-Source Capacitance (Cd): 863 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0035 Ohm
   Package: TO220

 NCEA85H25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEA85H25 Datasheet (PDF)

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 ncea85h25.pdf

NCEA85H25 NCEA85H25

http://www.ncepower.comNCEA85H25NCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 85V,I =250ADescription DS DThe NCEA85H25 uses advanced trench technology and R

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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