All MOSFET. NCEA85H25 Datasheet

 

NCEA85H25 Datasheet and Replacement


   Type Designator: NCEA85H25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 425 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 250 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 863 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO220
 

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NCEA85H25 Datasheet (PDF)

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NCEA85H25

http://www.ncepower.comNCEA85H25NCE Automotive N-Channel Enhancement Mode Power MOSFETGeneral Features V = 85V,I =250ADescription DS DThe NCEA85H25 uses advanced trench technology and R

Datasheet: NCEA6050KA , NCEA6058K , NCEA6080K , NCEA60ND08S , NCEA60ND18G , NCEA60P82AK , NCEA65NF036T , NCEA65NF036T4 , IRFZ24N , NCEAP0135AK , NCEAP016N10LL , NCEAP016N60VD , NCEAP016N85LL , NCEAP0178AK , NCEAP018N60AGU , NCEAP018N60GU , NCEAP018N85LL .

History: IRLR3715ZPBF

Keywords - NCEA85H25 MOSFET datasheet

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