All MOSFET. FQB25N33TMF085 Datasheet

 

FQB25N33TMF085 Datasheet and Replacement


   Type Designator: FQB25N33TMF085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 330 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: TO263 D2PAK
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FQB25N33TMF085 Datasheet (PDF)

 4.1. Size:1009K  fairchild semi
 fqb25n33tm.pdf pdf_icon

FQB25N33TMF085

September 2006 QFETFQB25N33330V N-Channel MOSFETFeatures General Description 25A, 330V, RDS(on) = 0.23 @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichilds proprietary, Low gate charge (typical 58nC)planar stripe, DMOS technology. Low Crss (typical 40pF)This advanced technology has been especially tailor

 4.2. Size:1209K  fairchild semi
 fqb25n33tm f085.pdf pdf_icon

FQB25N33TMF085

April 2010tmFQB25N33TM_F085330V N-Channel MOSFETFeatures General Description 25A, 330V, RDS(on) = 0.23 @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichilds proprietary, Low gate charge (typical 58nC)planar stripe, DMOS technology. Low Crss (typical 40pF)This advanced technology has been especially tailored t

Datasheet: SDD05N70 , FQB19N20C , SDD05N04 , FQB19N20L , SDD04N65 , FQB1P50 , FQB22P10 , FQB22P10TMF085 , IRFZ44N , FQB27P06 , FQB30N06L , FQB33N10 , SDD04N60 , FQB33N10L , SDD03N70 , FQB34N20 , SDD03N50 .

History: IPB22N03S4L-15 | LSC65R280HT | 2SK3700

Keywords - FQB25N33TMF085 MOSFET datasheet

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