FQB25N33TMF085 PDF and Equivalents Search

 

FQB25N33TMF085 Specs and Replacement

Type Designator: FQB25N33TMF085

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 330 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: TO263 D2PAK

FQB25N33TMF085 substitution

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FQB25N33TMF085 datasheet

 4.1. Size:1009K  fairchild semi
 fqb25n33tm.pdf pdf_icon

FQB25N33TMF085

September 2006 QFET FQB25N33 330V N-Channel MOSFET Features General Description 25A, 330V, RDS(on) = 0.23 @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichild s proprietary, Low gate charge (typical 58nC) planar stripe, DMOS technology. Low Crss (typical 40pF) This advanced technology has been especially tailor... See More ⇒

 4.2. Size:1209K  fairchild semi
 fqb25n33tm f085.pdf pdf_icon

FQB25N33TMF085

April 2010 tm FQB25N33TM_F085 330V N-Channel MOSFET Features General Description 25A, 330V, RDS(on) = 0.23 @VGS = 10V These N-Channel enhancement mode power field effect transistors are produced using Farichild s proprietary, Low gate charge (typical 58nC) planar stripe, DMOS technology. Low Crss (typical 40pF) This advanced technology has been especially tailored t... See More ⇒

Detailed specifications: SDD05N70, FQB19N20C, SDD05N04, FQB19N20L, SDD04N65, FQB1P50, FQB22P10, FQB22P10TMF085, IRFZ44N, FQB27P06, FQB30N06L, FQB33N10, SDD04N60, FQB33N10L, SDD03N70, FQB34N20, SDD03N50

Keywords - FQB25N33TMF085 MOSFET specs

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