All MOSFET. NCEB301Q Datasheet

 

NCEB301Q Datasheet and Replacement


   Type Designator: NCEB301Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: DFN3X3-8L
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NCEB301Q Datasheet (PDF)

 ..1. Size:814K  ncepower
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NCEB301Q

http://www.ncepower.com NCEB301Q30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFETDescriptionThe NCEB301Q is designed to provide a high efficiencysynchronous buck power stage with optimal layout andboard space utilization. It includes two specialized MOSFETsin a dual Power DFN3X3 package. The Q1 "High Side"MOSFET is desgined to minimze switching losses. The Schematic Dia

 7.1. Size:474K  ncepower
 nceb301g.pdf pdf_icon

NCEB301Q

Pb Free Producthttp://www.ncepower.com NCEB301G30V Half Bridge Dual N-Channel Enhancement Mode Power MOSFET Description The NCEB301G is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two specialized MOSFETs in a dual Power DFN5x6 package. The Q1 "High Side" MOSFET is desgined to minimze switching lo

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History: IRF9Z24NSPBF | ELM13401CA | 12N65KG-TF1-T | HMS18N80 | R5016ANJ | DH150N12B | BSB280N15NZ3G

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