BR20N50 Specs and Replacement

Type Designator: BR20N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 400 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: TO-220

BR20N50 substitution

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BR20N50 datasheet

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 br20n50.pdf pdf_icon

BR20N50

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 br20n40.pdf pdf_icon

BR20N50

BR20N40 Rev.C Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features dv/dt Low gate charge, Fast switching capability, Avalanche energy specified, Improved dv/dt capability. / Applications ... See More ⇒

Detailed specifications: MRF275G, MRF5003, MRF5007, MRF5007R1, MRF5015, MRF5035, 2N7002K1, BR10N60, IRF520, BR2N7002AK2, BR2N7002LK2, BR40N20, BR4N70, BR50N03, BR6N70, BR7N65, BRA10N65

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