BR20N50 Datasheet and Replacement
Type Designator: BR20N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 70 nC
tr ⓘ - Rise Time: 400 nS
Cossⓘ - Output Capacitance: 400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO-220
BR20N50 substitution
BR20N50 Datasheet (PDF)
br20n50.pdf
BR20N50 Rev. F Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features dv/dt Low gate charge, Fast switching capability, Avalanche energy specified, Improved dv/dt capability. / Applications
br20n40.pdf
BR20N40 Rev.C Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features dv/dt Low gate charge, Fast switching capability, Avalanche energy specified, Improved dv/dt capability. / Applications
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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