BRB70R1K2 Specs and Replacement

Type Designator: BRB70R1K2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 730 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 316 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-263

BRB70R1K2 substitution

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BRB70R1K2 datasheet

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BRB70R1K2

BRB70R1K2 Rev.A Jul.-2016 DATA SHEET / Descriptions TO-263 N MOS Super Junction N-Channel Power MOSFET in a TO-263 Plastic Package. / Features R =1.2 @V =10V Q =8.9nC typ, DS(ON) GS g Ultra Low RDS(ON) =1.2 @VGS =10V,Ultra Low Gate Charge, Qg=8.9nC typ, Fast switching capab... See More ⇒

Detailed specifications: BR6N70, BR7N65, BRA10N65, BRA7N65, BRB100N03, BRB10N65, BRB13N50, BRB4N60, IRFZ46N, BRB80N08A, BRB840, BRCS010N03SZC, BRCS010N04SZC, BRCS015N04SZC, BRCS016N03DP, BRCS016N03SZC, BRCS016N03ZC

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.