All MOSFET. BRB70R1K2 Datasheet

 

BRB70R1K2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BRB70R1K2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 730 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.3 V
   |Id|ⓘ - Maximum Drain Current: 4.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.7 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 316 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-263

 BRB70R1K2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BRB70R1K2 Datasheet (PDF)

 ..1. Size:629K  blue-rocket-elect
 brb70r1k2.pdf

BRB70R1K2 BRB70R1K2

BRB70R1K2 Rev.A Jul.-2016 DATA SHEET / Descriptions TO-263 N MOS Super Junction N-Channel Power MOSFET in a TO-263 Plastic Package. / Features R =1.2@V =10V Q =8.9nCtyp,DS(ON) GS gUltra Low RDS(ON) =1.2@VGS =10V,Ultra Low Gate Charge, Qg=8.9nC typ, Fast switching capab

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