BRB70R1K2 Datasheet and Replacement
Type Designator: BRB70R1K2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 730 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 316 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO-263
BRB70R1K2 substitution
BRB70R1K2 Datasheet (PDF)
brb70r1k2.pdf

BRB70R1K2 Rev.A Jul.-2016 DATA SHEET / Descriptions TO-263 N MOS Super Junction N-Channel Power MOSFET in a TO-263 Plastic Package. / Features R =1.2@V =10V Q =8.9nCtyp,DS(ON) GS gUltra Low RDS(ON) =1.2@VGS =10V,Ultra Low Gate Charge, Qg=8.9nC typ, Fast switching capab
Datasheet: BR6N70 , BR7N65 , BRA10N65 , BRA7N65 , BRB100N03 , BRB10N65 , BRB13N50 , BRB4N60 , RU7088R , BRB80N08A , BRB840 , BRCS010N03SZC , BRCS010N04SZC , BRCS015N04SZC , BRCS016N03DP , BRCS016N03SZC , BRCS016N03ZC .
History: IXTH86N25T | IXTH75N10L2 | HM60N04 | IXTH75N15 | IXTK170N10P | IXFH80N08 | IXTH80N20L
Keywords - BRB70R1K2 MOSFET datasheet
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History: IXTH86N25T | IXTH75N10L2 | HM60N04 | IXTH75N15 | IXTK170N10P | IXFH80N08 | IXTH80N20L



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