BRCS045N10SHBD
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS045N10SHBD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 180
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 150
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 90
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 955
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065
Ohm
Package:
TO-263
BRCS045N10SHBD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS045N10SHBD
Datasheet (PDF)
..1. Size:2030K blue-rocket-elect
brcs045n10shbd.pdf 
BRCS045N10SHBD Rev.A Feb.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching, HF Product. / Applications BMS High frequency switching and synchronous
2.1. Size:2151K blue-rocket-elect
brcs045n10shra.pdf
BRCS045N10SHRA Rev.A Feb.-2023 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications BMS High frequency switching and synchronous rectification, BMS, Motor.
6.1. Size:1904K blue-rocket-elect
brcs045n08shbd.pdf
BRCS045N08SHBD Rev.A Dec.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features V =80V I =155A DS DRDS(on)@10V4.5m(Type.3.5m) RDS(on)@6V9.0m(Type.4.7m) HF Product. / Applications
6.2. Size:1949K blue-rocket-elect
brcs045n08shra.pdf
BRCS045N08SHRA Rev.A Dec.-2023 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features V =80V I =155A DS DRDS(on)@10V4.5m(Type.3.8m) RDS(on)@6V9.0m(Type.5.3m) HF Product. / Applications
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