BRCS045N10SHBD Specs and Replacement

Type Designator: BRCS045N10SHBD

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 955 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO-263

BRCS045N10SHBD substitution

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BRCS045N10SHBD datasheet

 ..1. Size:2030K  blue-rocket-elect
 brcs045n10shbd.pdf pdf_icon

BRCS045N10SHBD

BRCS045N10SHBD Rev.A Feb.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features , Ultra Low On-Resistance,fast switching, HF Product. / Applications BMS High frequency switching and synchronous ... See More ⇒

 2.1. Size:2151K  blue-rocket-elect
 brcs045n10shra.pdf pdf_icon

BRCS045N10SHBD

BRCS045N10SHRA Rev.A Feb.-2023 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications BMS High frequency switching and synchronous rectification, BMS, Motor. ... See More ⇒

 6.1. Size:1904K  blue-rocket-elect
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BRCS045N10SHBD

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 6.2. Size:1949K  blue-rocket-elect
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BRCS045N10SHBD

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Detailed specifications: BRCS035N08SHRA, BRCS035N08SHZC, BRCS035N10SHBD, BRCS035N10SHZC, BRCS040N02DP, BRCS040N03DP, BRCS045N08SHBD, BRCS045N08SHRA, 2N7000, BRCS045N10SHRA, BRCS050N03DP, BRCS050N03DSC, BRCS050N03YB, BRCS050N03ZC, BRCS050N04BD, BRCS050N04RA, BRCS050N04YB

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