All MOSFET. FQD18N20V2 Datasheet

 

FQD18N20V2 Datasheet and Replacement


   Type Designator: FQD18N20V2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO252 DPAK
      - MOSFET Cross-Reference Search

 

FQD18N20V2 Datasheet (PDF)

 ..1. Size:748K  fairchild semi
 fqd18n20v2tf fqd18n20v2tm fqd18n20v2 fqu18n20v2.pdf pdf_icon

FQD18N20V2

January 2009QFETFQD18N20V2 / FQU18N20V2200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15A, 200V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 20 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been espec

 0.1. Size:846K  cn vbsemi
 fqd18n20v2tm.pdf pdf_icon

FQD18N20V2

FQD18N20V2TMwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.055 at VGS = 10 V 30 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RA

Datasheet: FQD13N06L , FQD13N10 , NDS8434 , FQD13N10L , MTD3055V , FQD16N25C , FQD17N08L , FQD17P06 , IRFB3607 , MTD3055VL , FQD19N10 , FQA24N50 , FQD19N10L , FQP6N70 , FQD1N60C , FQP50N06 , FQD1N80 .

History: R6011ENX | 1N70Z | AP30H80Q | R6006JND3 | NP89N04NUK | BSC0925ND | 2N7269

Keywords - FQD18N20V2 MOSFET datasheet

 FQD18N20V2 cross reference
 FQD18N20V2 equivalent finder
 FQD18N20V2 lookup
 FQD18N20V2 substitution
 FQD18N20V2 replacement

 

 
Back to Top

 


 
.