All MOSFET. FQD18N20V2 Datasheet

 

FQD18N20V2 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD18N20V2

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 20 nC

Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm

Package: TO252, DPAK

FQD18N20V2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD18N20V2 Datasheet (PDF)

0.1. fqd18n20v2tf fqd18n20v2tm fqd18n20v2 fqu18n20v2.pdf Size:748K _fairchild_semi

FQD18N20V2
FQD18N20V2

January 2009 QFET® FQD18N20V2 / FQU18N20V2 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15A, 200V, RDS(on) = 0.14Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 20 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been espec

Datasheet: FQD13N06L , FQD13N10 , NDS8434 , FQD13N10L , MTD3055V , FQD16N25C , FQD17N08L , FQD17P06 , IRFP4232 , MTD3055VL , FQD19N10 , FQA24N50 , FQD19N10L , FQP6N70 , FQD1N60C , FQP50N06 , FQD1N80 .

 

 
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