BRCS080N02RA Specs and Replacement

Type Designator: BRCS080N02RA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.1 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO-220

BRCS080N02RA substitution

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BRCS080N02RA datasheet

 ..1. Size:2660K  blue-rocket-elect
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BRCS080N02RA

BRCS080N02RA Rev.A Feb.-2023 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications Power switching application,Load switching,Uninterruptible po... See More ⇒

 4.1. Size:633K  blue-rocket-elect
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BRCS080N02RA

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brcs080n02zb.pdf pdf_icon

BRCS080N02RA

BRCS080N02ZB Rev.C Dec.-2023 DATA SHEET / Descriptions DFN3 3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN3 3A-8L Plastic Package. / Features V (V) = 20V I = 43A (V = 12V) DS D GS R DS(ON)@10V 10mR(Typ.8.0mR) R DS(ON)@4.5V 11mR(Typ.9.5mR) R DS(ON)@2.5V 16mR(Typ.14mR) HF Pr... See More ⇒

 5.1. Size:1829K  blue-rocket-elect
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BRCS080N02RA

BRCS080N03YB Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN 3 3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 3 3A-8L Plastic Package. / Features VDS (V) = 30V ID =30 A (VGS = 20V) RDS(ON)@10V 9mR(Typ.8mR) HF Product. / Applications DC/DC ... See More ⇒

Detailed specifications: BRCS070N10SZC, BRCS070P03DP, BRCS070P03YB, BRCS070P03YM, BRCS080C03SC, BRCS080C03YA, BRCS080C03YM, BRCS080C04SC, BS170, BRCS080N02ZB, BRCS080N02ZJ, BRCS080N03DSC, BRCS080N03YB, BRCS080N04SC, BRCS080N04SDP, BRCS080N04YB, BRCS080N04ZB

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