Справочник MOSFET. BRCS080N02RA

 

BRCS080N02RA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BRCS080N02RA
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 13 nC
   trⓘ - Время нарастания: 3.1 ns
   Cossⓘ - Выходная емкость: 1200 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для BRCS080N02RA

 

 

BRCS080N02RA Datasheet (PDF)

 ..1. Size:2660K  blue-rocket-elect
 brcs080n02ra.pdf

BRCS080N02RA BRCS080N02RA

BRCS080N02RA Rev.A Feb.-2023 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications Power switching application,Load switching,Uninterruptible po

 4.1. Size:633K  blue-rocket-elect
 brcs080n02zj.pdf

BRCS080N02RA BRCS080N02RA

BRCS080N02ZJ Rev.C Dec.-2021 DATA SHEET / Descriptions DFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = 20V ID = 8A (VGS = 12V) HF Product. / Applications DC/DC

 4.2. Size:1294K  blue-rocket-elect
 brcs080n02zb.pdf

BRCS080N02RA BRCS080N02RA

BRCS080N02ZB Rev.C Dec.-2023 DATA SHEET / Descriptions DFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN33A-8L Plastic Package. / Features V (V) = 20V I = 43A (V =12V) DS D GS RDS(ON)@10V10mR(Typ.8.0mR) RDS(ON)@4.5V11mR(Typ.9.5mR) RDS(ON)@2.5V16mR(Typ.14mR) HF Pr

 5.1. Size:1829K  blue-rocket-elect
 brcs080n03yb.pdf

BRCS080N02RA BRCS080N02RA

BRCS080N03YB Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =30 A (VGS = 20V) RDS(ON)@10V9mR(Typ.8mR) HFProduct. / Applications DC/DC

 5.2. Size:1268K  blue-rocket-elect
 brcs080n04sc.pdf

BRCS080N02RA BRCS080N02RA

BRCS080N04SC Rev.A Jun.-2022 DATA SHEET / Descriptions SOP-8 N N-Channel Enhancement Mode Field Effect Transistor in a SOP-8 Plastic Package. / Features VDS = 40V ID =15A (VGS = 20V) RDS(ON)@10V8mR(Typ.6.4mR) HF Product. / Applications

 5.3. Size:1705K  blue-rocket-elect
 brcs080n04sdp.pdf

BRCS080N02RA BRCS080N02RA

BRCS080N04SDP Rev.A Sep.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 40V DSI =54A (V = 20V) D GS RDS(ON)@10V8mR(Typ.7.5mR) HF Product. / Applications DC/DC These devices are well suite

 5.4. Size:1674K  blue-rocket-elect
 brcs080n03dsc.pdf

BRCS080N02RA BRCS080N02RA

BRCS080N03DSC Rev.A Aug.-2023 DATA SHEET / Descriptions SOP-8 N MOS Double N-CHANNEL MOSFET in a SOP-8 Plastic Package. / Features V (V)=30V I =16A DS DRDS(ON)@10V

 5.5. Size:1369K  blue-rocket-elect
 brcs080n04zc.pdf

BRCS080N02RA BRCS080N02RA

BRCS080N04ZC Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN 56 N N-Channel MOSFET in a PDFN 56 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;

 5.6. Size:2391K  blue-rocket-elect
 brcs080n04yb.pdf

BRCS080N02RA BRCS080N02RA

BRCS080N04YB Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 40V ID =45 A (VGS = 20V) RDS(ON)@10V8mR(Typ.6.4mR) HFProduct. / Applications DC/DC

 5.7. Size:1194K  blue-rocket-elect
 brcs080n04zb.pdf

BRCS080N02RA BRCS080N02RA

BRCS080N04ZB Rev.A May.-2022 DATA SHEET / Descriptions DFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN33A-8L Plastic Package. / Features VDS (V) = 40V ID = 40A (VGS = 20V) HF Product. / Applications DC/DC

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