MTD3055VL Datasheet and Replacement
Type Designator: MTD3055VL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO252 DPAK
MTD3055VL substitution
MTD3055VL Datasheet (PDF)
mtd3055vl.pdf

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD3055VL/DDesigner's Data SheetMTD3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FET NChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.18 OHMtance area product about o
mtd3055vl.pdf

August 1999DISTRIBUTION GROUP*MTD3055VLN-Channel Logic Level Enhancement Mode Field Effect TransistorGeneral DescriptionFeatures DS(ON) GS
mtd3055vlrev2a.pdf

MOTOROLAOrder this document SEMICONDUCTOR TECHNICAL DATAby MTD3055VL/DDesigner's Data SheetMTD3055VLTMOS VMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FET NChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.18 OHMtance area product about o
mtd3055vrev2a.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTD3055V/DDesigner's Data SheetMTD3055VTMOS VMotorola Preferred DevicePower Field Effect TransistorDPAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 12 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresis-RDS(on) = 0.15 OHMtance area product about one
Datasheet: FQD13N10 , NDS8434 , FQD13N10L , MTD3055V , FQD16N25C , FQD17N08L , FQD17P06 , FQD18N20V2 , IRFZ24N , FQD19N10 , FQA24N50 , FQD19N10L , FQP6N70 , FQD1N60C , FQP50N06 , FQD1N80 , FQA28N50 .
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