MTD3055VL Specs and Replacement
Type Designator: MTD3055VL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
MTD3055VL substitution
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MTD3055VL datasheet
mtd3055vl.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD3055VL/D Designer's Data Sheet MTD3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 12 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.18 OHM tance area product about o... See More ⇒
mtd3055vl.pdf
August 1999 DISTRIBUTION GROUP* MTD3055VL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features DS(ON) GS ... See More ⇒
mtd3055vlrev2a.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD3055VL/D Designer's Data Sheet MTD3055VL TMOS V Motorola Preferred Device Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET N Channel Enhancement Mode Silicon Gate 12 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on resis- RDS(on) = 0.18 OHM tance area product about o... See More ⇒
Detailed specifications: FQD13N10, NDS8434, FQD13N10L, MTD3055V, FQD16N25C, FQD17N08L, FQD17P06, FQD18N20V2, TK10A60D, FQD19N10, FQA24N50, FQD19N10L, FQP6N70, FQD1N60C, FQP50N06, FQD1N80, FQA28N50
Keywords - MTD3055VL MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SI5948DU | EMB20P03G
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