FQD19N10 MOSFET Datasheet: N-Ch, 100V, 15.6A. Full specification with pinout and replacement list

FQD19N10 Specs and Replacement

Type Designator: FQD19N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 15.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO252 DPAK

FQD19N10 substitution

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FQD19N10 datasheet

..1. Size:678K fairchild semi
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January 2009 QFET FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 32 pF) This advanced technology has been especial... See More ⇒

0.1. Size:688K fairchild semi
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January 2009 QFET FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 14 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been ... See More ⇒

0.2. Size:884K cn vbsemi
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FQD19N10L www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS... See More ⇒

Detailed specifications: NDS8434, FQD13N10L, MTD3055V, FQD16N25C, FQD17N08L, FQD17P06, FQD18N20V2, MTD3055VL, AO4407, FQA24N50, FQD19N10L, FQP6N70, FQD1N60C, FQP50N06, FQD1N80, FQA28N50, FQD20N06