Справочник MOSFET. FQD19N10

 

FQD19N10 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: FQD19N10

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 50 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 25 V

Максимально допустимый постоянный ток стока (Id): 15.6 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 19 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.1 Ohm

Тип корпуса: TO252_DPAK

Аналог (замена) для FQD19N10

 

 

FQD19N10 Datasheet (PDF)

1.1. fqd19n10ltf fqd19n10ltm.pdf Size:688K _fairchild_semi

FQD19N10 FQD19N10

January 2009 QFET® FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been

1.2. fqd19n10l fqu19n10l.pdf Size:688K _fairchild_semi

FQD19N10 FQD19N10

January 2009 QFET FQD19N10L / FQU19N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been especially tai

 1.3. fqd19n10tf fqd19n10tm.pdf Size:678K _fairchild_semi

FQD19N10 FQD19N10

January 2009 QFET® FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 15.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 32 pF) This advanced technology has been especial

1.4. fqd19n10 fqu19n10.pdf Size:678K _fairchild_semi

FQD19N10 FQD19N10

January 2009 QFET FQD19N10 / FQU19N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 32 pF) This advanced technology has been especially tailored to

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