BRCS120N10SZC Datasheet and Replacement
Type Designator: BRCS120N10SZC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 950 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PDFN5X6
BRCS120N10SZC substitution
BRCS120N10SZC Datasheet (PDF)
brcs120n10szc.pdf

BRCS120N10SZC Rev.A Jun.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance, H
brcs120n03ya.pdf

BRCS120N03YA Rev.A May.-2022 DATA SHEET / Descriptions PDFN33-8L N MOS DoubleN-CHANNELMOSFETinaPDFN33-8LPlasticPackage. / Features VDS (V) = 30V ID =24A (VGS =20V) RDS(ON)@10V13mR(Typ.11mR) HFProduct. / Applications Intendedforuseing
brcs120n02zj.pdf

BRCS120N02ZJ Rev.A Aug.-2020 DATA SHEET / Descriptions DFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = 20V ID = 8 A (VGS = 20V) HF Product. / Applications DC/DC
brcs120n03zj.pdf

BRCS120N03ZJRev.B Sep.-2020 DATA SHEET / DescriptionsDFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / FeaturesV (V) = 30VDSI = 8 A (V = 20V)D GSHF Product. / ApplicationsDC/DC
Datasheet: BRCS120N03DP , BRCS120N03YA , BRCS120N03YB , BRCS120N03ZB , BRCS120N06HA , BRCS120N06SRA , BRCS120N06SYM , BRCS120N06YB , AON7403 , BRCS120P012MC , BRCS120P012ZJ , BRCS120P03YB , BRCS120P03ZC , BRCS120P04DP , BRCS120P04YB , BRCS120P04ZC , BRCS12N65BD .
History: AP6679GS-A | FQP7N20 | TPD65R700MFD
Keywords - BRCS120N10SZC MOSFET datasheet
BRCS120N10SZC cross reference
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History: AP6679GS-A | FQP7N20 | TPD65R700MFD



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