BRCS120N10SZC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BRCS120N10SZC
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 48 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 47 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 25 nC
trⓘ - Время нарастания: 3 ns
Cossⓘ - Выходная емкость: 950 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
Тип корпуса: PDFN5X6
Аналог (замена) для BRCS120N10SZC
BRCS120N10SZC Datasheet (PDF)
brcs120n10szc.pdf
BRCS120N10SZC Rev.A Jun.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance, H
brcs120n03ya.pdf
BRCS120N03YA Rev.A May.-2022 DATA SHEET / Descriptions PDFN33-8L N MOS DoubleN-CHANNELMOSFETinaPDFN33-8LPlasticPackage. / Features VDS (V) = 30V ID =24A (VGS =20V) RDS(ON)@10V13mR(Typ.11mR) HFProduct. / Applications Intendedforuseing
brcs120n02zj.pdf
BRCS120N02ZJ Rev.A Aug.-2020 DATA SHEET / Descriptions DFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / Features VDS (V) = 20V ID = 8 A (VGS = 20V) HF Product. / Applications DC/DC
brcs120n03zj.pdf
BRCS120N03ZJRev.B Sep.-2020 DATA SHEET / DescriptionsDFN 2*2B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 2*2B-6L Plastic Package. / FeaturesV (V) = 30VDSI = 8 A (V = 20V)D GSHF Product. / ApplicationsDC/DC
brcs120n03zb.pdf
BRCS120N03ZB Rev.C Mar.-2022 DATA SHEET / Descriptions DFN 33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID = 20 A (VGS =20V) RDS(ON)@10V13mR(Typ.11mR) HF Product. / Applications
brcs120n06ha.pdf
BRCS120N06HA Rev.A Nov.-2018 DATA SHEET / Descriptions TO-247 N N-CHANNEL MOSFET in a TO-247Plastic Package. / Features Low gate charge minimize switching loss and fast recovery body diode.HF Product. / Applications DC/DC
brcs120n02lzj.pdf
BRCS120N02LZJ Rev.C Nov.-2021 DATA SHEET / Descriptions DFN22B-6L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN22B-6LPlastic Package. / Features VDS (V) =20V ID = 8 A (VGS =12V) HF Product. / Applications DC/DC
brcs120n03dp.pdf
BRCS120N03DP Rev.A Dec.-2022 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features V (V) = 30V DSI =42A (V = 20V) D GS RDS(ON)@10V12.5mR(Typ.11.7mR) HF Product. / Applications DC/DC These devices are well su
brcs120n03yb.pdf
BRCS120N03YB Rev.A Mar.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 30V ID =20 A (VGS = 20V) RDS(ON)@10V13mR(Typ.11mR) HFProduct. / Applications DC/DC
brcs120n06yb.pdf
BRCS120N06YB Rev.A Feb.-2022 DATA SHEET / Descriptions PDFN33A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a PDFN 33A-8L Plastic Package. / Features VDS (V) = 60V ID =24 A (VGS = 20V) RDS(ON)@10V13mR(Typ.11.5mR) HFProduct. / Applications DC/DC
brcs120n06sra.pdf
BRCS120N06SRA Rev.A Apr.-2023 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching,HF Product. DS(on) rss / Applications
brcs120n06sym.pdf
BRCS120N06SYM Rev.A May.-2022 DATA SHEET / Descriptions PDFN56A N Dual N-CHANNEL MOSFET in a PDFN56A Plastic Package. / Features Dual N-Ch VDS(V)=60V ID=24.5A RDS(ON)
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
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