BRCS200N04YA
MOSFET. Datasheet pdf. Equivalent
Type Designator: BRCS200N04YA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 12
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 19
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.2
nC
trⓘ - Rise Time: 3.7
nS
Cossⓘ -
Output Capacitance: 350
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package: PDFN3X3-8L
BRCS200N04YA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BRCS200N04YA
Datasheet (PDF)
..1. Size:1292K blue-rocket-elect
brcs200n04ya.pdf 
BRCS200N04YA Rev.A May.-2023 DATA SHEET / Descriptions PDFN33-8L N MOS Double N-CHANNEL MOSFET in a PDFN33-8L Plastic Package. / Features V =40V I =19A DS DRDS(ON)@10V
4.1. Size:645K blue-rocket-elect
brcs200n04zb.pdf
BRCS200N04ZB Rev.B Jun.-2021 DATA SHEET / Descriptions DFN 3*3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 3*3A-8L Plastic Package. / Features VDS (V) = 40V ID = 12 A (VGS = 20V) HF Product. / Applications DC/DC
4.2. Size:864K blue-rocket-elect
brcs200n04dsc.pdf
BRCS200N04DSC Rev.A May.-2020 DATA SHEET / Descriptions SOP-8 N Power Trench MOS Dual N-Channel Power Trench MOSFET in a SOP-8 Plastic Package. / Features Low RDS(ON),Low gate charge, use for a wide range of power conversion applications
5.1. Size:1176K blue-rocket-elect
brcs200n03yn.pdf
BRCS200N03YN Rev.A Jul.-2022 DATA SHEET / Descriptions DFN 22C-6L N+N MOS Double N+N-CHANNEL MOSFET in a DFN 22C-6L Plastic Package. / Features VDS (V) = 30V ID = 6.3A (VGS = 20V) HF Product. / Applications Battery protection swit
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.
