BRCS500P10DP Datasheet and Replacement
Type Designator: BRCS500P10DP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 5.9 nC
tr ⓘ - Rise Time: 2.4 nS
Cossⓘ - Output Capacitance: 1350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO-252
BRCS500P10DP substitution
BRCS500P10DP Datasheet (PDF)
brcs500p10dp.pdf

BRCS500P10DP Rev.A Aug.-2023 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS(V)=-100V I =-28A DRDS(ON)@-10V
brcs500p10zc.pdf

BRCS500P10ZC Rev.A Sep.-2023 DATA SHEET / Descriptions PDFN56 N MOS P-CHANNEL MOSFET in a PDFN56 Plastic Package. / Features VDS(V)=-100V I =-29A DRDS(ON)@-10V
brcs50n06bd.pdf

BRCS50N06BD Rev.A Sep.-2022 DATA SHEET / Descriptions N TO-263 N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features R C DS(on) rssLow R ,low gate charge, low C , fast switching, Trench Technologies, HF Product. DS(on) rss / Applications
brcs50n06ra.pdf

BRCS50N06RA Rev.A Sep.-2020 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching, Trench Technologies. Halogen-free Product. / Applications
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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