BRCS500P10DP MOSFET Datasheet: P-Ch, 100V, 28A. Full specification with pinout and replacement list

BRCS500P10DP Specs and Replacement

Type Designator: BRCS500P10DP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.4 nS

Cossⓘ - Output Capacitance: 1350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO-252

BRCS500P10DP substitution

- MOSFET ⓘ Cross-Reference Search

BRCS500P10DP datasheet

..1. Size:2033K blue-rocket-elect
brcs500p10dp.pdf pdf_icon

BRCS500P10DP Rev.A Aug.-2023 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS(V)=-100V I =-28A D RDS(ON)@-10V... See More ⇒

4.1. Size:2054K blue-rocket-elect
brcs500p10zc.pdf pdf_icon

BRCS500P10ZC Rev.A Sep.-2023 DATA SHEET / Descriptions PDFN5 6 N MOS P-CHANNEL MOSFET in a PDFN5 6 Plastic Package. / Features VDS(V)=-100V I =-29A D RDS(ON)@-10V... See More ⇒

8.1. Size:932K blue-rocket-elect
brcs50n06bd.pdf pdf_icon

BRCS50N06BD Rev.A Sep.-2022 DATA SHEET / Descriptions N TO-263 N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features R C DS(on) rss Low R ,low gate charge, low C , fast switching, Trench Technologies, HF Product. DS(on) rss / Applications ... See More ⇒

8.2. Size:906K blue-rocket-elect
brcs50n06ra.pdf pdf_icon

BRCS50N06RA Rev.A Sep.-2020 DATA SHEET / Descriptions N TO-220 N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching, Trench Technologies. Halogen-free Product. / Applications ... See More ⇒