BRCS60N02DP Datasheet and Replacement
Type Designator: BRCS60N02DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 36 nC
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-252
BRCS60N02DP substitution
BRCS60N02DP Datasheet (PDF)
brcs60n02dp.pdf

BRCS60N02DP Rev.A Apr.-2019 DATA SHEET / Descriptions N TO-252 N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. Halogen-free Product. / Applications
brcs630fa.pdf

BRCS630FA Rev.A Sep.-2023 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features V =200VI =9A DS DRDS(on)@10V0.4(Type.0.35) HF Product. / Applications LED Networking,Load Switch,LED applications.
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRF1405 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
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