BRCS60N02DP Specs and Replacement
Type Designator: BRCS60N02DP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-252
BRCS60N02DP substitution
- MOSFET ⓘ Cross-Reference Search
BRCS60N02DP datasheet
brcs630fa.pdf
BRCS630FA Rev.A Sep.-2023 DATA SHEET / Descriptions TO-220F N MOS N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features V =200V I =9A DS D R DS(on)@10V 0.4 (Type.0.35 ) HF Product. / Applications LED Networking,Load Switch,LED applications. ... See More ⇒
Detailed specifications: BRCS500P10ZC, BRCS50N06BD, BRCS50N06DP, BRCS50N06IP, BRCS50N06RA, BRCS5N50YU, BRCS5P06MC, BRCS5P06MF, IRF3205, BRCS630FA, BRCS700P10DP, BRCS800P06SC, BRCS900N10SYM, BRCS900P10DP, BRCS90P03DP, BRCS9N20YU, BRD4N65S
Keywords - BRCS60N02DP MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: 2SK1698 | 2SK3092D
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