All MOSFET. BRCS700P10DP Datasheet

 

BRCS700P10DP Datasheet and Replacement


   Type Designator: BRCS700P10DP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.4 nS
   Cossⓘ - Output Capacitance: 840 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO-252
 

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BRCS700P10DP Datasheet (PDF)

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BRCS700P10DP

BRCS700P10DP Rev.C Aug.-2023 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS(V)=-100V I =-22A DRDS(ON)@-10V

 7.1. Size:739K  blue-rocket-elect
 brcs7002k2zk.pdf pdf_icon

BRCS700P10DP

BRCS7002K2ZK Rev.A Jul.-2020 DATA SHEET / Descriptions DFN1006-3L-0.5 N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 1006-3L Plastic Package. / Features 2KV Sensitive gate trigger current and Low Holding current.ESD protect

 8.1. Size:798K  blue-rocket-elect
 brcs70n08ip.pdf pdf_icon

BRCS700P10DP

BRCS70N08IP Rev.A Nov.-2017 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici

Datasheet: BRCS50N06DP , BRCS50N06IP , BRCS50N06RA , BRCS5N50YU , BRCS5P06MC , BRCS5P06MF , BRCS60N02DP , BRCS630FA , IRF840 , BRCS800P06SC , BRCS900N10SYM , BRCS900P10DP , BRCS90P03DP , BRCS9N20YU , BRD4N65S , BRD5N20 , BRD5N65 .

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