BRCS700P10DP PDF and Equivalents Search

 

BRCS700P10DP Specs and Replacement

Type Designator: BRCS700P10DP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.4 nS

Cossⓘ - Output Capacitance: 840 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO-252

BRCS700P10DP substitution

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BRCS700P10DP datasheet

 ..1. Size:2099K  blue-rocket-elect
 brcs700p10dp.pdf pdf_icon

BRCS700P10DP

BRCS700P10DP Rev.C Aug.-2023 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS(V)=-100V I =-22A D RDS(ON)@-10V... See More ⇒

 7.1. Size:739K  blue-rocket-elect
 brcs7002k2zk.pdf pdf_icon

BRCS700P10DP

BRCS7002K2ZK Rev.A Jul.-2020 DATA SHEET / Descriptions DFN1006-3L-0.5 N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 1006-3L Plastic Package. / Features 2KV Sensitive gate trigger current and Low Holding current.ESD protect... See More ⇒

 8.1. Size:798K  blue-rocket-elect
 brcs70n08ip.pdf pdf_icon

BRCS700P10DP

BRCS70N08IP Rev.A Nov.-2017 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici... See More ⇒

Detailed specifications: BRCS50N06DP, BRCS50N06IP, BRCS50N06RA, BRCS5N50YU, BRCS5P06MC, BRCS5P06MF, BRCS60N02DP, BRCS630FA, IRF840, BRCS800P06SC, BRCS900N10SYM, BRCS900P10DP, BRCS90P03DP, BRCS9N20YU, BRD4N65S, BRD5N20, BRD5N65

Keywords - BRCS700P10DP MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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