All MOSFET. BRCS700P10DP Datasheet

 

BRCS700P10DP Datasheet and Replacement


   Type Designator: BRCS700P10DP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.9 nC
   tr ⓘ - Rise Time: 2.4 nS
   Cossⓘ - Output Capacitance: 840 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO-252
 

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BRCS700P10DP Datasheet (PDF)

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BRCS700P10DP

BRCS700P10DP Rev.C Aug.-2023 DATA SHEET / Descriptions TO-252 P MOS P-CHANNEL MOSFET in a TO-252 Plastic Package. / Features VDS(V)=-100V I =-22A DRDS(ON)@-10V

 7.1. Size:739K  blue-rocket-elect
 brcs7002k2zk.pdf pdf_icon

BRCS700P10DP

BRCS7002K2ZK Rev.A Jul.-2020 DATA SHEET / Descriptions DFN1006-3L-0.5 N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 1006-3L Plastic Package. / Features 2KV Sensitive gate trigger current and Low Holding current.ESD protect

 8.1. Size:798K  blue-rocket-elect
 brcs70n08ip.pdf pdf_icon

BRCS700P10DP

BRCS70N08IP Rev.A Nov.-2017 DATA SHEET / Descriptions TO-251 N MOS N-CHANNEL MOSFET in a TO-251 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high effici

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: FDG6320C

Keywords - BRCS700P10DP MOSFET datasheet

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