BRD7N65S MOSFET Datasheet: N-Ch, 650V, 7A. Full specification with pinout and replacement list

BRD7N65S Specs and Replacement

Type Designator: BRD7N65S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 160 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO-252

BRD7N65S substitution

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BRD7N65S datasheet

..1. Size:1095K blue-rocket-elect
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BRD7N65S Rev.A Dec.-2023 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , , Low gate charge, low crss, fast switching,HF Product. Have good Electromagnetic Interference porfo... See More ⇒

7.1. Size:657K blue-rocket-elect
brd7n65.pdf pdf_icon

BRD7N65 Rev.B Mar.-2023 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , , Low gate charge, low crss, fast switching. Halogen-free Product,HF Product. / Applications DC/DC Thes... See More ⇒

8.1. Size:1016K blue-rocket-elect
brd7n60.pdf pdf_icon

BRD7N60 Rev.E Feb.-2017 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features 600V MOSFET, , , 600V Enhanced Power MOSFET, Low gate charge, low crss, fast switching. / Applications ... See More ⇒

Detailed specifications: BRD65R280C, BRD65R380C, BRD65R600C, BRD65R650C, BRD7002K1, BRD7002K2, BRD7N60, BRD7N65, 2N7000, BRF4N65S, BRF4N70, BRF5N50, BRF60R580C, BRF65R280C, BRF65R380C, BRF65R650C, BRFL10N65S