All MOSFET. BRF60R580C Datasheet

 

BRF60R580C MOSFET. Datasheet pdf. Equivalent


   Type Designator: BRF60R580C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO-220F

 BRF60R580C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BRF60R580C Datasheet (PDF)

 ..1. Size:1056K  blue-rocket-elect
 brf60r580c.pdf

BRF60R580C BRF60R580C

BRF60R580C Rev.A Nov.-2016 DATA SHEET / Descriptions TO-220F N 600V N-CHANNEL 600V Super-Junction Power MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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