BRF60R580C PDF and Equivalents Search

 

BRF60R580C Specs and Replacement

Type Designator: BRF60R580C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO-220F

BRF60R580C substitution

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BRF60R580C datasheet

 ..1. Size:1056K  blue-rocket-elect
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BRF60R580C

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Detailed specifications: BRD7002K1, BRD7002K2, BRD7N60, BRD7N65, BRD7N65S, BRF4N65S, BRF4N70, BRF5N50, IRFP250N, BRF65R280C, BRF65R380C, BRF65R650C, BRFL10N65S, BRFL12N65S, BRFL13N50, BRFL15N50, BRFL20N50

Keywords - BRF60R580C MOSFET specs

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