All MOSFET. BRF60R580C Datasheet

 

BRF60R580C Datasheet and Replacement


   Type Designator: BRF60R580C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO-220F
 

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BRF60R580C Datasheet (PDF)

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BRF60R580C

BRF60R580C Rev.A Nov.-2016 DATA SHEET / Descriptions TO-220F N 600V N-CHANNEL 600V Super-Junction Power MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC

Datasheet: BRD7002K1 , BRD7002K2 , BRD7N60 , BRD7N65 , BRD7N65S , BRF4N65S , BRF4N70 , BRF5N50 , AON7408 , BRF65R280C , BRF65R380C , BRF65R650C , BRFL10N65S , BRFL12N65S , BRFL13N50 , BRFL15N50 , BRFL20N50 .

History: DH90N055R | IPB120N08S4-03 | SQM90142E | CS65N20-30 | C3M0065100K | DMG8880LSS | IXFV110N10P

Keywords - BRF60R580C MOSFET datasheet

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