BRF60R580C Datasheet and Replacement
Type Designator: BRF60R580C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 110 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO-220F
BRF60R580C substitution
BRF60R580C Datasheet (PDF)
brf60r580c.pdf
BRF60R580C Rev.A Nov.-2016 DATA SHEET / Descriptions TO-220F N 600V N-CHANNEL 600V Super-Junction Power MOSFET in a TO-220F Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC
Datasheet: BRD7002K1 , BRD7002K2 , BRD7N60 , BRD7N65 , BRD7N65S , BRF4N65S , BRF4N70 , BRF5N50 , IRFP250N , BRF65R280C , BRF65R380C , BRF65R650C , BRFL10N65S , BRFL12N65S , BRFL13N50 , BRFL15N50 , BRFL20N50 .
History: H01H14B
Keywords - BRF60R580C MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: H01H14B
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