All MOSFET. BRU26N50 Datasheet

 

BRU26N50 MOSFET. Datasheet pdf. Equivalent


   Type Designator: BRU26N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 26 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 81 nC
   Cossⓘ - Output Capacitance: 520 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO-3P

 BRU26N50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BRU26N50 Datasheet (PDF)

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 bru26n50.pdf

BRU26N50 BRU26N50

BRU26N50 Rev.A May.-2017 DATA SHEET / Descriptions TO-3P N MOSN-Channel MOSFET in a TO-3P Plastic Package. / Features 10010V0.24 RDS(ON)=0.24 @ VGS=10VHigh Switching Speed100% Avalanche Tested. / Applications

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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