BRU26N50 Datasheet and Replacement
Type Designator: BRU26N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 290 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 520 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
Package: TO-3P
BRU26N50 substitution
BRU26N50 Datasheet (PDF)
bru26n50.pdf
BRU26N50 Rev.A May.-2017 DATA SHEET / Descriptions TO-3P N MOSN-Channel MOSFET in a TO-3P Plastic Package. / Features 10010V0.24 RDS(ON)=0.24 @ VGS=10VHigh Switching Speed100% Avalanche Tested. / Applications
Datasheet: BRI4N70 , BRI50N06 , BRI5N65 , BRI65R380C , BRI740 , BRI7N60 , BRI7N65 , BRU24N50 , STP80NF70 , BSS123K2 , RU12N65P , RU13N65R , RU15P12C , RU17P12C , RU17P6C , RU18N65P , RU205C .
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