RU12N65P MOSFET. Datasheet pdf. Equivalent
Type Designator: RU12N65P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 47 nC
trⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 252 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220F
RU12N65P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU12N65P Datasheet (PDF)
ru12n65p.pdf
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RU12N65PN-Channel Advanced Power MOSFETFeatures Pin Description 650V/12A, RDS (ON) =650m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSTO220FDDDDDApplications Dpp D AC/DC Power Conversion
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
![RU12N65P](https://alltransistors.com/images/us.png)
![RU12N65P](https://alltransistors.com/images/es.png)
![RU12N65P](https://alltransistors.com/images/ru.png)
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