All MOSFET. RU13N65R Datasheet

 

RU13N65R MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU13N65R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 132 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 47 nC
   trⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 252 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220

 RU13N65R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU13N65R Datasheet (PDF)

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 ru13n65r.pdf

RU13N65R RU13N65R

RU13N65RN-Channel Advanced Power MOSFETFeatures Pin Description 650V/13A, RDS (ON) =650m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSTO220DDDDDApplications Dpp D AC/DC Power Conversion i

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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