RU13N65R Specs and Replacement
Type Designator: RU13N65R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 132 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 252 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220
RU13N65R substitution
- MOSFET ⓘ Cross-Reference Search
RU13N65R datasheet
ru13n65r.pdf
RU13N65R N-Channel Advanced Power MOSFET Features Pin Description 650V/13A, RDS (ON) =650m (Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant) G DS TO220 D D D D D Applications D pp D AC/DC Power Conversion i... See More ⇒
Detailed specifications: BRI65R380C, BRI740, BRI7N60, BRI7N65, BRU24N50, BRU26N50, BSS123K2, RU12N65P, AO4407, RU15P12C, RU17P12C, RU17P6C, RU18N65P, RU205C, RU2060L, RU20N65P, RU20N65R
Keywords - RU13N65R MOSFET specs
RU13N65R cross reference
RU13N65R equivalent finder
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RU13N65R substitution
RU13N65R replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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