RU15P12C Specs and Replacement
Type Designator: RU15P12C
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 315 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: SOT23
RU15P12C substitution
- MOSFET ⓘ Cross-Reference Search
RU15P12C datasheet
ru15p12c.pdf
RU15P12C P-Channel Advanced Power MOSFET Features Pin Description -15V/-12A, RDS (ON) =16m (Typ.)@VGS=-4.5V D RDS (ON) =25m (Typ.)@VGS=-2.5V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Very Fast Switching V F t S it hi Low Threshold Voltage G Lead Free and Green Devices (RoHS Compliant) S SOT23-3 D D D D D D pp Applicat... See More ⇒
Detailed specifications: BRI740, BRI7N60, BRI7N65, BRU24N50, BRU26N50, BSS123K2, RU12N65P, RU13N65R, BS170, RU17P12C, RU17P6C, RU18N65P, RU205C, RU2060L, RU20N65P, RU20N65R, RU20P3C
Keywords - RU15P12C MOSFET specs
RU15P12C cross reference
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