RU15P12C PDF and Equivalents Search

 

RU15P12C Specs and Replacement

Type Designator: RU15P12C

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 315 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: SOT23

RU15P12C substitution

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RU15P12C datasheet

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ru15p12c.pdf pdf_icon

RU15P12C

RU15P12C P-Channel Advanced Power MOSFET Features Pin Description -15V/-12A, RDS (ON) =16m (Typ.)@VGS=-4.5V D RDS (ON) =25m (Typ.)@VGS=-2.5V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Very Fast Switching V F t S it hi Low Threshold Voltage G Lead Free and Green Devices (RoHS Compliant) S SOT23-3 D D D D D D pp Applicat... See More ⇒

Detailed specifications: BRI740, BRI7N60, BRI7N65, BRU24N50, BRU26N50, BSS123K2, RU12N65P, RU13N65R, BS170, RU17P12C, RU17P6C, RU18N65P, RU205C, RU2060L, RU20N65P, RU20N65R, RU20P3C

Keywords - RU15P12C MOSFET specs

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