All MOSFET. RU15P12C Datasheet

 

RU15P12C Datasheet and Replacement


   Type Designator: RU15P12C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: SOT23
 

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RU15P12C Datasheet (PDF)

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RU15P12C

RU15P12CP-Channel Advanced Power MOSFETFeatures Pin Description -15V/-12A, RDS (ON) =16m(Typ.)@VGS=-4.5VD RDS (ON) =25m(Typ.)@VGS=-2.5V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Very Fast SwitchingV F t S it hi Low Threshold VoltageG Lead Free and Green Devices (RoHS Compliant)SSOT23-3DDDDDDppApplicat

Datasheet: BRI740 , BRI7N60 , BRI7N65 , BRU24N50 , BRU26N50 , BSS123K2 , RU12N65P , RU13N65R , 18N50 , RU17P12C , RU17P6C , RU18N65P , RU205C , RU2060L , RU20N65P , RU20N65R , RU20P3C .

History: TN0200TS

Keywords - RU15P12C MOSFET datasheet

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