RU15P12C MOSFET. Datasheet pdf. Equivalent
Type Designator: RU15P12C
Marking Code: X*
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 315 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: SOT23
RU15P12C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU15P12C Datasheet (PDF)
ru15p12c.pdf
RU15P12CP-Channel Advanced Power MOSFETFeatures Pin Description -15V/-12A, RDS (ON) =16m(Typ.)@VGS=-4.5VD RDS (ON) =25m(Typ.)@VGS=-2.5V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Very Fast SwitchingV F t S it hi Low Threshold VoltageG Lead Free and Green Devices (RoHS Compliant)SSOT23-3DDDDDDppApplicat
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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