All MOSFET. RU17P12C Datasheet

 

RU17P12C Datasheet and Replacement


   Type Designator: RU17P12C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 167 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: SOT23
 

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RU17P12C Datasheet (PDF)

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RU17P12C

RU17P12CP-Channel Advanced Power MOSFETFeatures Pin Description -18V/-12A, RDS (ON) =12m(Typ.)@VGS=-4.5VD RDS (ON) =15m(Typ.)@VGS=-2.5V Uses Ruichips Proprietary New TrenchTM Technology Low On-Resistance Exceptional dv/dt capability Low Gate Charge Minimize Switching LossG Lead Free and Green Devices (RoHS Compliant)S SOT23-3DApplications

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RU17P12C

RU17P6CP-Channel Advanced Power MOSFETFeatures Pin Description -18V/-6A,RDS (ON) =21m(Typ.)@VGS=-4.5VDRDS (ON) =26m(Typ.)@VGS=-2.5V Uses Ruichips Proprietary New TrenchTM Technology Low On-ResistanceE ti l d /dt bilit Exceptional dv/dt capability Low Gate Charge Minimize Switching LossG Lead Free and Green Devices (RoHS Compliant)SSOT23-3D

Datasheet: BRI7N60 , BRI7N65 , BRU24N50 , BRU26N50 , BSS123K2 , RU12N65P , RU13N65R , RU15P12C , 10N65 , RU17P6C , RU18N65P , RU205C , RU2060L , RU20N65P , RU20N65R , RU20P3C , RU2N65P .

Keywords - RU17P12C MOSFET datasheet

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