RU17P12C MOSFET Datasheet: P-Ch, 18V, 12A. Full specification with pinout and replacement list

RU17P12C Specs and Replacement

Type Designator: RU17P12C

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 18 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 63 nS

Cossⓘ - Output Capacitance: 167 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: SOT23

RU17P12C substitution

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RU17P12C datasheet

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RU17P12C P-Channel Advanced Power MOSFET Features Pin Description -18V/-12A, RDS (ON) =12m (Typ.)@VGS=-4.5V D RDS (ON) =15m (Typ.)@VGS=-2.5V Uses Ruichips Proprietary New TrenchTM Technology Low On-Resistance Exceptional dv/dt capability Low Gate Charge Minimize Switching Loss G Lead Free and Green Devices (RoHS Compliant) S SOT23-3 D Applications ... See More ⇒

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RU17P6C P-Channel Advanced Power MOSFET Features Pin Description -18V/-6A, RDS (ON) =21m (Typ.)@VGS=-4.5V D RDS (ON) =26m (Typ.)@VGS=-2.5V Uses Ruichips Proprietary New TrenchTM Technology Low On-Resistance E ti l d /dt bilit Exceptional dv/dt capability Low Gate Charge Minimize Switching Loss G Lead Free and Green Devices (RoHS Compliant) S SOT23-3 D... See More ⇒

Detailed specifications: BRI7N60, BRI7N65, BRU24N50, BRU26N50, BSS123K2, RU12N65P, RU13N65R, RU15P12C, 4N60, RU17P6C, RU18N65P, RU205C, RU2060L, RU20N65P, RU20N65R, RU20P3C, RU2N65P