All MOSFET. RU17P12C Datasheet

 

RU17P12C MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU17P12C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 167 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: SOT23

 RU17P12C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU17P12C Datasheet (PDF)

 ..1. Size:279K  ruichips
 ru17p12c.pdf

RU17P12C RU17P12C

RU17P12CP-Channel Advanced Power MOSFETFeatures Pin Description -18V/-12A, RDS (ON) =12m(Typ.)@VGS=-4.5VD RDS (ON) =15m(Typ.)@VGS=-2.5V Uses Ruichips Proprietary New TrenchTM Technology Low On-Resistance Exceptional dv/dt capability Low Gate Charge Minimize Switching LossG Lead Free and Green Devices (RoHS Compliant)S SOT23-3DApplications

 9.1. Size:421K  ruichips
 ru17p6c.pdf

RU17P12C RU17P12C

RU17P6CP-Channel Advanced Power MOSFETFeatures Pin Description -18V/-6A,RDS (ON) =21m(Typ.)@VGS=-4.5VDRDS (ON) =26m(Typ.)@VGS=-2.5V Uses Ruichips Proprietary New TrenchTM Technology Low On-ResistanceE ti l d /dt bilit Exceptional dv/dt capability Low Gate Charge Minimize Switching LossG Lead Free and Green Devices (RoHS Compliant)SSOT23-3D

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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