RU20N65P PDF Specs and Replacement
Type Designator: RU20N65P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 83 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO220F
RU20N65P substitution
RU20N65P PDF Specs
ru20n65p.pdf
RU20N65P N-Channel Advanced Power MOSFET Features Pin Description 650V/20A, RDS (ON) =400m (Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant) GD S TO220F D D D D D Applications D pp D AC/DC Power Conversion ... See More ⇒
ru20n65r.pdf
RU20N65R N-Channel Advanced Power MOSFET Features Pin Description 650V/20A, RDS (ON) =400m (Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant) G DS TO220 D D D D D Applications D pp D AC/DC Power Conversion i... See More ⇒
Detailed specifications: RU12N65P , RU13N65R , RU15P12C , RU17P12C , RU17P6C , RU18N65P , RU205C , RU2060L , 5N60 , RU20N65R , RU20P3C , RU2N65P , RU30110M , RU30120M3 , RU30180M-C , RU3030M3 , RU3040M3 .
History: P1006BIS
Keywords - RU20N65P MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
