RU30L30M3
MOSFET. Datasheet pdf. Equivalent
Type Designator: RU30L30M3
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 33
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 42
nC
trⓘ - Rise Time: 32
nS
Cossⓘ -
Output Capacitance: 250
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024
Ohm
Package: DFN3030
RU30L30M3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU30L30M3
Datasheet (PDF)
..1. Size:760K ruichips
ru30l30m3.pdf 
RU30L30M3P-Channel Advanced Power MOSFETFeatures Pin Description -30V/-30A,RDS (ON) =14m(Typ.)@VGS=-10VRDS (ON) =18m(Typ.)@VGS=-4.5V Uses Ruichips advanced TrenchTM technologyGS Excellent QgxRDS(on) product(FOM)SS Reliable and RuggedR li bl d R dSD 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compliant)DD
6.1. Size:270K ruichips
ru30l30m.pdf
RU30L30MP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-30A,RDS (ON) =12m(Typ.)@VGS=-10VRDS (ON) =20m(Typ.)@VGS=-4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche testedPDFN3333 Lead Free and Green Devices Available(RoHS Compliant)Applications Power Management Load SwitchingP-Channel MOSFETAbsolute
6.2. Size:899K cn vbsemi
ru30l30m.pdf
RU30L30Mwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e,f Qg (Typ.),Typ.Definition0.0075 at VGS = - 10 V -35 TrenchFET Power MOSFET- 30 24.6 nC Low Thermal Resistance PowerPAK0.0105 at VGS = - 4.5V - 30Package with Small Size and Low 1.07 mm Profile 100 % Rg
9.1. Size:307K ruichips
ru30l15h.pdf
RU30L15HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-14.5A,RDS (ON) =13m (Typ.) @ VGS=-10VRDS (ON) =22m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged ESD ProtectedSOP-8 Lead Free and Green AvailableApplications Load Switching. PWM Applications.P-Channel MOSFETAbsolute Maximum RatingsSymbol
9.2. Size:678K ruichips
ru30l40m3.pdf
RU30L40M3P-Channel Advanced Power MOSFETFeatures Pin Description -30V/-40A,RDS (ON) =6.5m(Typ.)@VGS=-10VGSSRDS (ON) =9.5m(Typ.)@VGS=-4.5VS Uses Ruichips advanced TrenchTM technology D Excellent QgxRDS(on) product(FOM) Reliable and Rugged DDDD 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)PIN1DFN3030Appli
9.3. Size:337K ruichips
ru30l70l.pdf
RU30L70LP-Channel Advanced Power MOSFETFeatures Pin Description -30V/-70A, RDS (ON) =5.5m(Typ.)@VGS=-10V D RDS (ON) =9m(Typ.)@VGS=-4.5V Low On-Resistance Super High Dense Cell Design ESD Protected ESD Protected 100% Avalanche Tested 175C Operating TemperatureG Lead Free and Green Devices Available (RoHS Compliant)STO252Applications
9.4. Size:751K ruichips
ru30l40m-c.pdf
RU30L40M-CP-Channel Advanced Power MOSFETFeatures Pin Description -30V/-40A,RDS (ON) =5.2m(Typ.)@VGS=-10VGSSRDS (ON) =7.5m(Typ.)@VGS=-4.5VS Uses Ruichips advanced TrenchTM technology D Excellent QgxRDS(on) product(FOM) Low On-Resistance DDDD ESD protected 100% avalanche testedPIN1 Lead Free and Green Devices (RoHS Compliant)DFN506
9.5. Size:863K cn vbsemi
ru30l15h.pdf
RU30L15Hwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs
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