All MOSFET. RU4030M3 Datasheet

 

RU4030M3 Datasheet and Replacement


   Type Designator: RU4030M3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: DFN3030
 

 RU4030M3 substitution

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RU4030M3 Datasheet (PDF)

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RU4030M3

RU4030M3N-Channel Advanced Power MOSFETFeatures Pin Description 40V/30A,RDS (ON) =11m(Typ.)@VGS=10VSGRDS (ON) =14m(Typ.)@VGS=4.5VSS Uses Ruichips advanced TrenchTM technology Excellent QgxRDS(on) product(FOM)D Reliable and RuggedR li bl d R dDDD 100% avalanche testedD Lead Free and Green Devices Available (RoHS Compliant)PIN1DFN3030

Datasheet: RU30C40M3 , RU30J30M3 , RU30L30M3 , RU30L40M3 , RU30L40M-C , RU30P40M3 , RU40120L , RU40180R , STP65NF06 , RU40C20M3 , RU40C40M , RU40L60L , RU40L60M , RU4N65P , RU6035M3 , RU6051H , RU65110R .

History: RU4089R | IRF7324PBF-1

Keywords - RU4030M3 MOSFET datasheet

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