RU4030M3 Specs and Replacement
Type Designator: RU4030M3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 195 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: DFN3030
RU4030M3 substitution
- MOSFET ⓘ Cross-Reference Search
RU4030M3 datasheet
ru4030m3.pdf
RU4030M3 N-Channel Advanced Power MOSFET Features Pin Description 40V/30A, RDS (ON) =11m (Typ.)@VGS=10V SG RDS (ON) =14m (Typ.)@VGS=4.5V SS Uses Ruichips advanced TrenchTM technology Excellent QgxRDS(on) product(FOM) D Reliable and Rugged R li bl d R d DD D 100% avalanche tested D Lead Free and Green Devices Available (RoHS Compliant) PIN1 DFN3030 ... See More ⇒
Detailed specifications: RU30C40M3, RU30J30M3, RU30L30M3, RU30L40M3, RU30L40M-C, RU30P40M3, RU40120L, RU40180R, IRFZ46N, RU40C20M3, RU40C40M, RU40L60L, RU40L60M, RU4N65P, RU6035M3, RU6051H, RU65110R
Keywords - RU4030M3 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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