RU6035M3 PDF and Equivalents Search

 

RU6035M3 Specs and Replacement

Type Designator: RU6035M3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: DFN3030

RU6035M3 substitution

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RU6035M3 datasheet

 ..1. Size:631K  ruichips
 ru6035m3.pdf pdf_icon

RU6035M3

RU6035M3 N-Channel Advanced Power MOSFET Features Pin Description 60V/35A, RDS (ON) =18m (Typ.)@VGS=10V G S S RDS (ON) =20m (Typ.)@VGS=4.5V S D Uses Ruichips advanced TrenchTM technology Excellent QgxRDS(on) product(FOM) D D Reliable and Rugged D D 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) PIN1 DFN3030 D Appli... See More ⇒

Detailed specifications: RU40120L, RU40180R, RU4030M3, RU40C20M3, RU40C40M, RU40L60L, RU40L60M, RU4N65P, K2611, RU6051H, RU65110R, RU7N65L, RU82100R, RU9N65P, RUH008N15M-C, RUH120N140R, RUH120N140S

Keywords - RU6035M3 MOSFET specs

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