All MOSFET. RU6035M3 Datasheet

 

RU6035M3 Datasheet and Replacement


   Type Designator: RU6035M3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: DFN3030
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RU6035M3 Datasheet (PDF)

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RU6035M3

RU6035M3N-Channel Advanced Power MOSFETFeatures Pin Description 60V/35A,RDS (ON) =18m(Typ.)@VGS=10V GSSRDS (ON) =20m(Typ.)@VGS=4.5VSD Uses Ruichips advanced TrenchTM technology Excellent QgxRDS(on) product(FOM)DD Reliable and RuggedDD 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)PIN1DFN3030D Appli

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SK3700 | IPB22N03S4L-15 | LSC65R280HT

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