All MOSFET. RU6035M3 Datasheet

 

RU6035M3 Datasheet and Replacement


   Type Designator: RU6035M3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: DFN3030
 

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RU6035M3 Datasheet (PDF)

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RU6035M3

RU6035M3N-Channel Advanced Power MOSFETFeatures Pin Description 60V/35A,RDS (ON) =18m(Typ.)@VGS=10V GSSRDS (ON) =20m(Typ.)@VGS=4.5VSD Uses Ruichips advanced TrenchTM technology Excellent QgxRDS(on) product(FOM)DD Reliable and RuggedDD 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)PIN1DFN3030D Appli

Datasheet: RU40120L , RU40180R , RU4030M3 , RU40C20M3 , RU40C40M , RU40L60L , RU40L60M , RU4N65P , IRF9640 , RU6051H , RU65110R , RU7N65L , RU82100R , RU9N65P , RUH008N15M-C , RUH120N140R , RUH120N140S .

History: RF1S640SM | STH185N10F3-6

Keywords - RU6035M3 MOSFET datasheet

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