RU65110R PDF and Equivalents Search

 

RU65110R Specs and Replacement

Type Designator: RU65110R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 176 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 710 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO220

RU65110R substitution

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RU65110R datasheet

 ..1. Size:367K  ruichips
 ru65110r.pdf pdf_icon

RU65110R

RU65110R N-Channel Advanced Power MOSFET Features Pin Description 65V/110A, RDS (ON) =4.5m (Typ.)@VGS=10V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated F t S it hi d F ll A l h R t d 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G ... See More ⇒

 9.1. Size:304K  ruichips
 ru65120r.pdf pdf_icon

RU65110R

RU65120R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 65V/120A, RDS (ON) =4.5m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters and Off-line UPS N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter... See More ⇒

Detailed specifications: RU4030M3, RU40C20M3, RU40C40M, RU40L60L, RU40L60M, RU4N65P, RU6035M3, RU6051H, RU7088R, RU7N65L, RU82100R, RU9N65P, RUH008N15M-C, RUH120N140R, RUH120N140S, RUH120N140T, RUH120N35L

Keywords - RU65110R MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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