All MOSFET. RU82100R Datasheet

 

RU82100R MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU82100R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 87 nC
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220

 RU82100R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU82100R Datasheet (PDF)

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 ru82100r.pdf

RU82100R RU82100R

RU82100RN-Channel Advanced Power MOSFETF t Pi D i tiFeatures Pin Description 82V/100A,RDS (ON) =7.5m(Typ.)@VGS=10V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated Fast Switching and Fully Avalanche Rated 100% avalanche tested Lead Free and Green Devices Ava

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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