RU82100R PDF and Equivalents Search

 

RU82100R Specs and Replacement

Type Designator: RU82100R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 82 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 335 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO220

RU82100R substitution

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RU82100R datasheet

 ..1. Size:483K  ruichips
 ru82100r.pdf pdf_icon

RU82100R

RU82100R N-Channel Advanced Power MOSFET F t Pi D i ti Features Pin Description 82V/100A, RDS (ON) =7.5m (Typ.)@VGS=10V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated Fast Switching and Fully Avalanche Rated 100% avalanche tested Lead Free and Green Devices Ava... See More ⇒

Detailed specifications: RU40C40M, RU40L60L, RU40L60M, RU4N65P, RU6035M3, RU6051H, RU65110R, RU7N65L, AOD4184A, RU9N65P, RUH008N15M-C, RUH120N140R, RUH120N140S, RUH120N140T, RUH120N35L, RUH120N35M3, RUH120N70R

Keywords - RU82100R MOSFET specs

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