All MOSFET. RU82100R Datasheet

 

RU82100R Datasheet and Replacement


   Type Designator: RU82100R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 82 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220
 

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RU82100R Datasheet (PDF)

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RU82100R

RU82100RN-Channel Advanced Power MOSFETF t Pi D i tiFeatures Pin Description 82V/100A,RDS (ON) =7.5m(Typ.)@VGS=10V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated Fast Switching and Fully Avalanche Rated 100% avalanche tested Lead Free and Green Devices Ava

Datasheet: RU40C40M , RU40L60L , RU40L60M , RU4N65P , RU6035M3 , RU6051H , RU65110R , RU7N65L , AO4468 , RU9N65P , RUH008N15M-C , RUH120N140R , RUH120N140S , RUH120N140T , RUH120N35L , RUH120N35M3 , RUH120N70R .

History: RZL035P01TR | SDF240 | WMJ53N60C4 | 3SK162 | SM2312NSA | WMO15N65C2 | STF28NM60ND

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