All MOSFET. RUH008N15M-C Datasheet

 

RUH008N15M-C Datasheet and Replacement


   Type Designator: RUH008N15M-C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: DFN5060
      - MOSFET Cross-Reference Search

 

RUH008N15M-C Datasheet (PDF)

 ..1. Size:279K  ruichips
 ruh008n15m-c.pdf pdf_icon

RUH008N15M-C

RUH008N15M-CN-Channel Advanced Power MOSFETFeatures Pin Description 150V/100A,RDS (ON) =8m(Typ.)@VGS=10V Uses Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) PerformanceG Low Gate Charge Minimizing Switching LossSSS 100% Avalanche TestedD Lead Free and Green Devices (RoHS Compliant)DDDDPIN1DFN5060

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 23N50 | IPI47N10S-33 | NCEP60T18D | FTK3022 | IRFZ48RS | IXTH13N80 | WSD30L30DN

Keywords - RUH008N15M-C MOSFET datasheet

 RUH008N15M-C cross reference
 RUH008N15M-C equivalent finder
 RUH008N15M-C lookup
 RUH008N15M-C substitution
 RUH008N15M-C replacement

 

 
Back to Top

 


 
.