All MOSFET. RUH008N15M-C Datasheet

 

RUH008N15M-C Datasheet and Replacement


   Type Designator: RUH008N15M-C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: DFN5060
 

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RUH008N15M-C Datasheet (PDF)

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RUH008N15M-C

RUH008N15M-CN-Channel Advanced Power MOSFETFeatures Pin Description 150V/100A,RDS (ON) =8m(Typ.)@VGS=10V Uses Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) PerformanceG Low Gate Charge Minimizing Switching LossSSS 100% Avalanche TestedD Lead Free and Green Devices (RoHS Compliant)DDDDPIN1DFN5060

Datasheet: RU40L60M , RU4N65P , RU6035M3 , RU6051H , RU65110R , RU7N65L , RU82100R , RU9N65P , AO4468 , RUH120N140R , RUH120N140S , RUH120N140T , RUH120N35L , RUH120N35M3 , RUH120N70R , RUH120N81L , RUH120N90M .

History: IRFB7530PBF

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