RUH008N15M-C PDF and Equivalents Search

 

RUH008N15M-C Specs and Replacement

Type Designator: RUH008N15M-C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 290 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: DFN5060

RUH008N15M-C substitution

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RUH008N15M-C datasheet

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RUH008N15M-C

RUH008N15M-C N-Channel Advanced Power MOSFET Features Pin Description 150V/100A, RDS (ON) =8m (Typ.)@VGS=10V Uses Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) Performance G Low Gate Charge Minimizing Switching Loss SS S 100% Avalanche Tested D Lead Free and Green Devices (RoHS Compliant) D D DD PIN1 DFN5060 ... See More ⇒

Detailed specifications: RU40L60M, RU4N65P, RU6035M3, RU6051H, RU65110R, RU7N65L, RU82100R, RU9N65P, 60N06, RUH120N140R, RUH120N140S, RUH120N140T, RUH120N35L, RUH120N35M3, RUH120N70R, RUH120N81L, RUH120N90M

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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