All MOSFET. RUH008N15M-C Datasheet

 

RUH008N15M-C MOSFET. Datasheet pdf. Equivalent


   Type Designator: RUH008N15M-C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: DFN5060

 RUH008N15M-C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RUH008N15M-C Datasheet (PDF)

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 ruh008n15m-c.pdf

RUH008N15M-C RUH008N15M-C

RUH008N15M-CN-Channel Advanced Power MOSFETFeatures Pin Description 150V/100A,RDS (ON) =8m(Typ.)@VGS=10V Uses Ruichips Advanced RUISGTTM Technology Ultra Low On-Resistance Excellent Qg&RDS(on) PerformanceG Low Gate Charge Minimizing Switching LossSSS 100% Avalanche TestedD Lead Free and Green Devices (RoHS Compliant)DDDDPIN1DFN5060

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: TPM2601C3 | IXFN200N07

 

 
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