RUH40300T Datasheet. Specs and Replacement
Type Designator: RUH40300T 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 212 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 300 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 69 nS
Cossⓘ - Output Capacitance: 1010 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: TOLL
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RUH40300T substitution
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RUH40300T datasheet
ruh40300t.pdf
RUH40300T N-Channel Advanced Power MOSFET Features Pin Description 40V/300A, 11 RDS (ON) =1.5m (Typ.)@VGS=10V 9 10 Using Ruichips Proprietary New Trench Technology 10 Ultra Low On-Resistance 9 Excellent Qg&RDS(on) Performance 11 1 1 Low Gate Charge Minimizing Switching Loss Low Gate Charge Minimizing Switching Loss 2 8 34 76 100% Avalanche Tested... See More ⇒
ruh4022m3.pdf
RUH4022M3 N-Channel Advanced Power MOSFET Features Pin Description 40V/20A, D RDS (ON) =16m (Typ.)@VGS=10V D D RDS (ON) =23m (Typ.)@VGS=4.5V D Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss G Ultra Low On-Resistance S S S Excellent QgxRDS(on) product(FOM) 100% Avalanche Tested PIN1 Lead Free and Green Devices... See More ⇒
ruh4040m3.pdf
RUH4040M3 N-Channel Advanced Power MOSFET Features Pin Description 40V/40A, RDS (ON) =7m (Typ.)@VGS=10V D D D RDS (ON) =12m (Typ.)@VGS=4.5V D Ultra Low On-Resistance Excellent QgxRDS(on) product(FOM) G 100% avalanche tested S S Lead Free and Green Devices Available (RoHS Compliant) S PIN1 DFN3030 D Applications DC/DC Converters On board power... See More ⇒
Detailed specifications: RUH30J105M, RUH30J120M, RUH30J51M, RUH30J85M, RUH30J95M, RUH40190M, RUH4022M3, RUH4025M3, IRF1010E, RUH40330T, RUH4040M3, RUH40D40M, RUH40E12C, RUH60120L, RUH60120M, RUH6080M3-C, RUH6080R
Keywords - RUH40300T MOSFET specs
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