RUH85210R MOSFET. Datasheet pdf. Equivalent
Type Designator: RUH85210R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 210 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 1750 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO220
RUH85210R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RUH85210R Datasheet (PDF)
ruh85210r.pdf
RUH85210RN-Channel Advanced Power MOSFETFeatures Pin Description 85V/210A, RDS (ON) =2.8m(Typ.)@VGS=10V Uses Ruichips advanced SGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d Fast Switching and Fully Avalanche Rated Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDD
ruh85230s.pdf
RUH85230SN-Channel Advanced Power MOSFETFeatures Pin Description 85V/230A,D RDS (ON) =2.5m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GSTO263DDDDDDAppl
ruh85120m-c.pdf
RUH85120M-CN-Channel Advanced Power MOSFETFeatures Pin Description 85V/120A,GRDS (ON) =4m(Typ.)@VGS=10VSSRDS (ON) =5.5m(Typ.)@VGS=4.5V SD Ultra Low On-Resistance Fast Switching SpeedDD 100% Avalanche TestedDD Uses Ruichips advanced SGTTM technology Lead Free and Green Devices (RoHS Compliant)PIN1DFN5060DApplications Synchronou
ruh85150r.pdf
RUH85150RN-Channel Advanced Power MOSFETFeatures Pin Description 85V/150A, RDS (ON) =3.4m(Typ.)@VGS=10V Uses Ruichips advanced RUISGTTM Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d 175C Operating Temperature Lead Free and Green Devices (RoHS Compliant)GDSTO220DDDDDDAppl
ruh85120s.pdf
RUH85120SN-Channel Advanced Power MOSFETFeatures Pin Description 85V/120A,DRDS (ON) =4.6m(Typ.)@VGS=10V Uses Ruichips advanced SGTTM technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% Avalanche Tested100% A l h T t d Fast Switching and Fully Avalanche Rated Lead Free and Green Devices (RoHS Compliant)GSTO263DDDDD
ruh85100m-c.pdf
RUH85100M-CN-Channel Advanced Power MOSFETFeatures Pin Description 85V/100A,RDS (ON) =6.5m(Typ.)@VGS=10VDRDS (ON) =9.5m(Typ.)@VGS=4.5VD Ultra Low On-ResistanceD Fast Switching SpeedD 100% Avalanche Tested Uses Ruichips advanced RUISGTTM technologyG Lead Free and Green Devices (RoHS Compliant)SSSPIN1DFN5060DApplications Syn
ruh85350t.pdf
RUH85350TN-Channel Advanced Power MOSFETFeatures Pin Description 85V/350A,11RDS (ON) =1.3m(Typ.)@VGS=10V910 Using Ruichips Advanced RUISGTTM Technology109 Ultra Low On-Resistance Excellent Qg&RDS(on) Performance1111 Low Gate Charge Minimizing Switching LossL G t Ch Mi i i i S it hi L2 834 76 100% Avalanche Tested56 54 Lead Free
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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