All MOSFET. RUQ4040M2 Datasheet

 

RUQ4040M2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RUQ4040M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: PDFN3333

 RUQ4040M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RUQ4040M2 Datasheet (PDF)

 ..1. Size:358K  ruichips
 ruq4040m2.pdf

RUQ4040M2 RUQ4040M2

RUQ4040M2N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,RDS (ON) =5m(Typ.)@VGS=10VDDDDRDS (ON) =6.5m(Typ.)@VGS=4.5V AEC-Q101 Qualified for Automotive Applications Ultra Low On-Resistance Uses Ruichips Advanced RUISGTTM Technology 100% Avalanche TestedGSS Lead Free and Green Devices (RoHS Compliant)SPIN1PDFN3333D

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