All MOSFET. RUQ4040M2 Datasheet

 

RUQ4040M2 Datasheet and Replacement


   Type Designator: RUQ4040M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: PDFN3333
 

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RUQ4040M2 Datasheet (PDF)

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RUQ4040M2

RUQ4040M2N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,RDS (ON) =5m(Typ.)@VGS=10VDDDDRDS (ON) =6.5m(Typ.)@VGS=4.5V AEC-Q101 Qualified for Automotive Applications Ultra Low On-Resistance Uses Ruichips Advanced RUISGTTM Technology 100% Avalanche TestedGSS Lead Free and Green Devices (RoHS Compliant)SPIN1PDFN3333D

Datasheet: RUH60D60M , RUH85100M-C , RUH85120M-C , RUH85120S , RUH85150R , RUH85210R , RUH85230S , RUH85350T , AO4407 , H0110D , H0110K , H01H14B , H01H14D , H01P13D , H01P13K , H10N60P , H10N65P .

History: P5515BK | MTN2510E3 | SQJ420EP | IXFN110N60P3 | VT6K1 | MS74N62 | GSM3424A

Keywords - RUQ4040M2 MOSFET datasheet

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