RUQ4040M2 Datasheet and Replacement
Type Designator: RUQ4040M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 310 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: PDFN3333
RUQ4040M2 substitution
RUQ4040M2 Datasheet (PDF)
ruq4040m2.pdf
RUQ4040M2N-Channel Advanced Power MOSFETFeatures Pin Description 40V/40A,RDS (ON) =5m(Typ.)@VGS=10VDDDDRDS (ON) =6.5m(Typ.)@VGS=4.5V AEC-Q101 Qualified for Automotive Applications Ultra Low On-Resistance Uses Ruichips Advanced RUISGTTM Technology 100% Avalanche TestedGSS Lead Free and Green Devices (RoHS Compliant)SPIN1PDFN3333D
Datasheet: RUH60D60M , RUH85100M-C , RUH85120M-C , RUH85120S , RUH85150R , RUH85210R , RUH85230S , RUH85350T , STP80NF70 , H0110D , H0110K , H01H14B , H01H14D , H01P13D , H01P13K , H10N60P , H10N65P .
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