RUQ4040M2 Specs and Replacement
Type Designator: RUQ4040M2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 310 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: PDFN3333
RUQ4040M2 substitution
- MOSFET ⓘ Cross-Reference Search
RUQ4040M2 datasheet
ruq4040m2.pdf
RUQ4040M2 N-Channel Advanced Power MOSFET Features Pin Description 40V/40A, RDS (ON) =5m (Typ.)@VGS=10V D D D D RDS (ON) =6.5m (Typ.)@VGS=4.5V AEC-Q101 Qualified for Automotive Applications Ultra Low On-Resistance Uses Ruichips Advanced RUISGTTM Technology 100% Avalanche Tested G S S Lead Free and Green Devices (RoHS Compliant) S PIN1 PDFN3333 D ... See More ⇒
Detailed specifications: RUH60D60M , RUH85100M-C , RUH85120M-C , RUH85120S , RUH85150R , RUH85210R , RUH85230S , RUH85350T , IRF530 , H0110D , H0110K , H01H14B , H01H14D , H01P13D , H01P13K , H10N60P , H10N65P .
Keywords - RUQ4040M2 MOSFET specs
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